中国物理B ›› 2007, Vol. 16 ›› Issue (5): 1276-1279.doi: 10.1088/1009-1963/16/5/018

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The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector

张义门, 周拥华, 张玉明   

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,\\ Microelectronics Institute, Xidian University, Xi'an 710071, China
  • 收稿日期:2006-08-22 修回日期:2006-09-25 出版日期:2007-05-20 发布日期:2007-05-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No 2002CB311904).

The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector

Zhang Yi-Men(张义门)†, Zhou Yong-Hua(周拥华), and Zhang Yu-Ming(张玉明)   

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China
  • Received:2006-08-22 Revised:2006-09-25 Online:2007-05-20 Published:2007-05-20
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No 2002CB311904).

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摘要： In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in the range from 300K to 900K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.

关键词: 6H-Silicon carbide UV photodetector, absorption coefficient, responsivity, response time

Abstract: In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in the range from 300K to 900K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.

Key words: 6H-Silicon carbide UV photodetector, absorption coefficient, responsivity, response time

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
85.60.Bt (Optoelectronic device characterization, design, and modeling)