中国物理B ›› 2007, Vol. 16 ›› Issue (3): 725-729.doi: 10.1088/1009-1963/16/3/027

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Low-dimensional structures formed by irradiation of laser

刘世荣1, 秦朝建1, 许丽2, 吴克跃2, 蔡绍洪2, 黄伟其3   

  1. (1)Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China; (2)Key Laboratory of Photoelectron Technology and Application, Guizhou University,Guiyang 550026, China; (3)Key Laboratory of Photoelectron Technology and Application, Guizhou University,Guiyang 550026, China;Department of Physics, Guizhou Educational College, Guiyang 550003, China
  • 收稿日期:2006-09-20 修回日期:2006-10-02 出版日期:2007-03-20 发布日期:2007-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No~10547006).

Low-dimensional structures formed by irradiation of laser

Huang Wei-Qi(黄伟其)a)c)†, Liu Shi-Rong(刘世荣)b), Xu Li(许丽)a), Wu Ke-Yue(吴克跃)a), Qin Cao-Jian(秦朝建)b), and Cai Sao-Hong(蔡绍洪)a)   

  1. a Key Laboratory of Photoelectron Technology and Application, Guizhou University,Guiyang 550026, China; b Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China; c Department of Physics, Guizhou Educational College, Guiyang 550003, China
  • Received:2006-09-20 Revised:2006-10-02 Online:2007-03-20 Published:2007-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No~10547006).

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摘要： Some kinds of low-dimensional nanostructures can be formed by irradiation of laser on the pure silicon sample and the SiGe alloy sample. This paper has studied the photoluminescence (PL) of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706nm and 725nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. A mechanism for increasing PL emission in the above structures is proposed, in which the trap states of the interface between SiO2 and nanocrystal play an important role.

关键词: low-dimensional nanostructures, photoluminescence, PL intensity, interface state

Abstract: Some kinds of low-dimensional nanostructures can be formed by irradiation of laser on the pure silicon sample and the SiGe alloy sample. This paper has studied the photoluminescence (PL) of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706nm and 725nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. A mechanism for increasing PL emission in the above structures is proposed, in which the trap states of the interface between SiO2 and nanocrystal play an important role.

Key words: low-dimensional nanostructures, photoluminescence, PL intensity, interface state

中图分类号:  (Ultraviolet, visible, and infrared radiation effects (including laser radiation))

  • 61.80.Ba
61.43.Gt (Powders, porous materials) 61.46.-w (Structure of nanoscale materials) 78.55.Hx (Other solid inorganic materials)