中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1339-1345.doi: 10.1088/1009-1963/15/6/035
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
姜涛, 张鹤鸣, 王伟, 胡辉勇, 戴显英
Jiang Tao (姜涛), Zhang He-Ming (张鹤鸣), Wang Wei (王伟), Hu Hui-Yong (胡辉勇), Dai Xian-Ying (戴显英)
摘要: A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si$_{1 - x}$Ge$_{x}$ layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including: 1) the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2) the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3) better transistor matching; and 4) flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.
中图分类号: (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)