中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1339-1345.doi: 10.1088/1009-1963/15/6/035

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel

姜涛, 张鹤鸣, 王伟, 胡辉勇, 戴显英   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2006-02-02 修回日期:2006-03-16 出版日期:2006-06-20 发布日期:2006-06-20
  • 基金资助:
    Project supported by the Preresearch from National Ministries and Commissions (Grant Nos 51408061104DZ01, 51439010904DZ0101).

Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel

Jiang Tao (姜涛), Zhang He-Ming (张鹤鸣), Wang Wei (王伟), Hu Hui-Yong (胡辉勇), Dai Xian-Ying (戴显英)   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2006-02-02 Revised:2006-03-16 Online:2006-06-20 Published:2006-06-20
  • Supported by:
    Project supported by the Preresearch from National Ministries and Commissions (Grant Nos 51408061104DZ01, 51439010904DZ0101).

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摘要： A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si$_{1 - x}$Ge$_{x}$ layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including: 1) the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2) the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3) better transistor matching; and 4) flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.

Abstract: A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si$_{1 - x}$Ge$_{x}$ layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including: 1) the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2) the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3) better transistor matching; and 4) flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.

Key words: strained SiGe/Si, quantum well channel, heterostructure CMOSFET, poly-SiGe gate

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
73.20.At (Surface states, band structure, electron density of states) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.61.Le (Other inorganic semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling)