中国物理B ›› 2006, Vol. 15 ›› Issue (2): 389-393.doi: 10.1088/1009-1963/15/2/026

• • 上一篇    下一篇

Self-assembled germanium nano-structures by laser-assisted oxidation

黄伟其1, 刘世荣2   

  1. (1)Department of Physics, Guizhou University, Guiyang 550026, China;Department of Physics, Guizhou Educational College, Guiyang 550003, China;Optoelectronics Physics Lab, Guizhou University, Guiyang 550026, China; (2)Institute of Geochemistry, Chinese Academy of Sciences,Guiyang 550003, China
  • 收稿日期:2005-04-20 修回日期:2005-10-08 出版日期:2006-02-20 发布日期:2006-02-20
  • 基金资助:
    Project supported by the Natural Science Foundation of Guizhou Province, China (Grant No 3067(2004)).

Self-assembled germanium nano-structures by laser-assisted oxidation

Huang Wei-Qi (黄伟其)acd, Liu Shi-Rong (刘世荣)b   

  1. a Department of Physics, Guizhou University, Guiyang 550026, Chinab Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, Chinac Department of Physics, Guizhou Educational College, Guiyang 550003, China; d Optoelectronics Physics Lab, Guizhou University, Guiyang 550026, China
  • Received:2005-04-20 Revised:2005-10-08 Online:2006-02-20 Published:2006-02-20
  • Supported by:
    Project supported by the Natural Science Foundation of Guizhou Province, China (Grant No 3067(2004)).

PDF (PC)

529

赞

摘要： The investigation on the oxidation behaviour of Si$_{1-x}$Ge$_{x}$ alloys ($x$=0.05, 0.15, and 0.25) is carried out. It is found for the first time that on the oxide film a germanium nano-cap with a thickness of 1.8--2.8nm and a few Ge nanoparticles with diameters ranging from 5.5 nm to 10 nm are formed by the low-temperature laser-assisted dry oxidation of Si$_{1 - x}$Ge$_{x}$ substrate. A new scanning method on the decline cross-section of the multiple-layer sample is adopted to measure the layer thickness and the composition. Some new peaks in photoluminescence (PL) spectra are discovered, which could be related to the nano-cap and the nano-particles of germanium. A suitable model and several new calculating formulae with the unrestricted Hartree--Fock--Roothaan (UHFR) method and quantum confinement analysis are proposed to interpret the PL spectra and the nano-structure mechanism in the oxide.

关键词: low-temperature oxidation, laser-assisted, nano-structure, PL spectra

Abstract: The investigation on the oxidation behaviour of Si$_{1-x}$Ge$_{x}$ alloys ($x$=0.05, 0.15, and 0.25) is carried out. It is found for the first time that on the oxide film a germanium nano-cap with a thickness of 1.8--2.8nm and a few Ge nanoparticles with diameters ranging from 5.5 nm to 10 nm are formed by the low-temperature laser-assisted dry oxidation of Si$_{1 - x}$Ge$_{x}$ substrate. A new scanning method on the decline cross-section of the multiple-layer sample is adopted to measure the layer thickness and the composition. Some new peaks in photoluminescence (PL) spectra are discovered, which could be related to the nano-cap and the nano-particles of germanium. A suitable model and several new calculating formulae with the unrestricted Hartree--Fock--Roothaan (UHFR) method and quantum confinement analysis are proposed to interpret the PL spectra and the nano-structure mechanism in the oxide.

Key words: low-temperature oxidation, laser-assisted, nano-structure, PL spectra

中图分类号:  (Oxidation)

  • 81.65.Mq
78.55.Hx (Other solid inorganic materials) 78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters) 78.66.-w (Optical properties of specific thin films) 68.55.-a (Thin film structure and morphology) 68.55.Nq (Composition and phase identification)