中国物理B ›› 2006, Vol. 15 ›› Issue (10): 2297-2305.doi: 10.1088/1009-1963/15/10/018
• CLASSICAL AREAS OF PHENOMENOLOGY • 上一篇 下一篇
王 源, 贾 嵩, 陈中建, 吉利久
Wang Yuan(王源)†, Jia Song(贾嵩), Chen Zhong-Jian(陈中建), and Ji Li-Jiu(吉利久)
摘要: A systemic and comprehensive ESD-induced parasitic model is presented in this paper, which is used to analyse the parasitic influences of electrostatic discharge (ESD) protection circuits on the performance of radio frequency applications. A novel low-parasitic ESD protection structure is made in a 0.35\mum 1P3M silicide CMOS process. The measured results show that this novel structure has a low parasitic capacitance about 310fF and a low leakage current about 12.2nA with a suitable ESD robustness target about 5kV human body model.
中图分类号: (Microwave integrated electronics)