中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127203-127203.doi: 10.1088/1674-1056/19/12/127203

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Design and manufacture of planar GaAs Gunn diode for millimeter wave application

杨浩1, 田超1, 董军荣1, 张海英1, 郭天义1, 黄杰2   

  1. (1)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (2)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;School of Physical Science and Technology, Southwest University, Chongqing 400715, China
  • 收稿日期:2010-06-07 修回日期:2010-07-08 出版日期:2010-12-15 发布日期:2010-12-15
  • 基金资助:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024) and the Fundamental Research Funds for Central University of China (Grant No. XDJK2009C020).

Design and manufacture of planar GaAs Gunn diode for millimeter wave application

Huang Jie(黄杰)a)b)†, Yang Hao(杨浩) a), Tian Chao(田超)a), Dong Jun-Rong(董军荣)a), Zhang Hai-Ying(张海英) a), and Guo Tian-Yi(郭天义)a)   

  1. a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b School of Physical Science and Technology, Southwest University, Chongqing 400715, China
  • Received:2010-06-07 Revised:2010-07-08 Online:2010-12-15 Published:2010-12-15
  • Supported by:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024) and the Fundamental Research Funds for Central University of China (Grant No. XDJK2009C020).

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摘要： GaAs-based planar Gunn diodes with AlGaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations: cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm2 is obtained. And the characteristics of negative differential resistance and the asymmetry of the current–voltage curve due to the AlGaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.

Abstract: GaAs-based planar Gunn diodes with AlGaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations: cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm2 is obtained. And the characteristics of negative differential resistance and the asymmetry of the current–voltage curve due to the AlGaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.

Key words: GaAs, planar Gunn diode, hot electron injector, millimeter generation

中图分类号:  (Microwave circuits)

  • 84.40.Dc
84.40.Lj (Microwave integrated electronics) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Fg (Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))