中国物理B ›› 2006, Vol. 15 ›› Issue (1): 199-202.doi: 10.1088/1009-1963/15/1/032

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

周新, 王世奇, 连贵君, 熊光成   

  1. Department of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2005-05-30 修回日期:2005-09-03 出版日期:2006-01-20 发布日期:2006-01-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 19974001) and the National Key Basic Research Special Foundation of China (Grant No NKBRSF G1999064604 and G2000036505).

Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

Zhou Xin (周新), Wang Shi-Qi (王世奇), Lian Gui-Jun (连贵君), Xiong Guang-Cheng (熊光成)   

  1. Department of Physics, Peking University, Beijing 100871, China
  • Received:2005-05-30 Revised:2005-09-03 Online:2006-01-20 Published:2006-01-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 19974001) and the National Key Basic Research Special Foundation of China (Grant No NKBRSF G1999064604 and G2000036505).

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摘要： High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlO$_{3}$ substrates by pulsed laser deposition (PLD) in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600$^\circ$C in 1Pa of the mixture gas. In addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification $I-V$ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.

Abstract: High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlO$_{3}$ substrates by pulsed laser deposition (PLD) in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600$^\circ$C in 1Pa of the mixture gas. In addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification $I-V$ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.

Key words: ZnO, PLD, heterostructure

中图分类号:  (Nucleation and growth)

  • 68.55.A-
73.61.Ga (II-VI semiconductors) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.66.Hf (II-VI semiconductors) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 75.70.Ak (Magnetic properties of monolayers and thin films)