中国物理B ›› 2004, Vol. 13 ›› Issue (11): 1947-1950.doi: 10.1088/1009-1963/13/11/033
刘波1, 宋志棠1, 张挺1, 封松林1, Chen Bomy2
Liu Bo (刘波)a, Song Zhi-Tang (宋志棠)a, Zhang Ting (张挺)a, Feng Song-Lin (封松林)a, Chen Bomyb
摘要: Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous -Te--Te- stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb-Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb-Sb (Te_2) and (Sb_2) Sb-Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb-Sb (Te_2).
中图分类号: (Infrared and Raman spectra)