中国物理B ›› 2003, Vol. 12 ›› Issue (9): 1016-1020.doi: 10.1088/1009-1963/12/9/317

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Electronic structure and optical properties of zinc-blende GaN quantum dots

冯东海1, 徐至展1, 贾天卿2   

  1. (1)Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; (2)Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; State Key Laboratory for Optical and Electric Materials and Technology, Zhongshan University, Guangzhou 510275, Chi
  • 收稿日期:2003-02-25 修回日期:2003-04-29 出版日期:2003-09-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the Shanghai Foundation of Science & Technology, China (Grant No 0159nm022), the National Natural Science Foundation of China (Grant No 60108002), and the State Key Program of Basic Research of China (Grant No G1999075200).

Electronic structure and optical properties of zinc-blende GaN quantum dots

Feng Dong-Hai (冯东海)a, Jia Tian-Qing (贾天卿)ab, Xu Zhi-Zhan (徐至展)a   

  1. a Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; b State Key Laboratory for Optical and Electric Materials and Technology, Zhongshan University, Guangzhou 510275, China
  • Received:2003-02-25 Revised:2003-04-29 Online:2003-09-16 Published:2005-03-16
  • Supported by:
    Project supported by the Shanghai Foundation of Science & Technology, China (Grant No 0159nm022), the National Natural Science Foundation of China (Grant No 60108002), and the State Key Program of Basic Research of China (Grant No G1999075200).

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摘要： The energy levels of zinc-blende GaN quantum dots (QDs) are studied within the framework of the effective-mass envelope-function approximation. The dependence of the energy of electron and hole states on the quantum dot (QD) size is presented. The selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various QD radii are calculated with the wavefunctions of quantized energy levels. The theoretical absorption spectrum of GaN QDs is in good agreement with the existing experimental result.

Abstract: The energy levels of zinc-blende GaN quantum dots (QDs) are studied within the framework of the effective-mass envelope-function approximation. The dependence of the energy of electron and hole states on the quantum dot (QD) size is presented. The selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various QD radii are calculated with the wavefunctions of quantized energy levels. The theoretical absorption spectrum of GaN QDs is in good agreement with the existing experimental result.

Key words: electronic structure, GaN, quantum dots, optical properties

中图分类号:  (Quantum dots)

  • 78.67.Hc
71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor) 71.20.Nr (Semiconductor compounds) 78.55.Cr (III-V semiconductors) 78.40.Fy (Semiconductors) 78.30.Fs (III-V and II-VI semiconductors)