中国物理B ›› 1997, Vol. 6 ›› Issue (2): 125-129.doi: 10.1088/1004-423X/6/2/005

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INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C60 FILMS IN HELIUM GAS ENVIRONMENT

陈光华1, 马国斌2, 杨映虎2   

  1. (1)Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China; (2)Department of Physics, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:1996-06-03 出版日期:1997-02-20 发布日期:1997-02-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C60 FILMS IN HELIUM GAS ENVIRONMENT

MA GUO-BIN (马国斌)a, YANG YING-HU (杨映虎)a, CHEN GUANG-HUA (陈光华)b   

  1. a Department of Physics, Lanzhou University, Lanzhou 730000, China; b Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China
  • Received:1996-06-03 Online:1997-02-20 Published:1997-02-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： The growth characteristics of C60 films were investigated in helium gas environment at pressures of 0, 2.667×10-2 and 6.667×10-2 Pa, respectively. X-ray diffraction results showed that perfectly (111) oriented monocrystalline C60 films with large grains were successfully deposited on synthetic 1M phlogopite mica-fluorophlogopite (0Ol) plane at a substrate temperature of 160℃ when the helium gas pressure is 2.667×10-2 Pa. The results indicated that under appropriate helium gas pressure, the energy change of C60 molecules through collisions with helium atoms, and the decrease of the supersaturation of the vapor pressure in the vicinity of the substrate resulted in a quasi-thermodynamic equilibrium deposition system. As a result, well-structured monocrystalline C60 films were deposited on (001) plane of the fluorophlogopite substrate.

Abstract: The growth characteristics of C60 films were investigated in helium gas environment at pressures of 0, 2.667×10-2 and 6.667×10-2 Pa, respectively. X-ray diffraction results showed that perfectly (111) oriented monocrystalline C60 films with large grains were successfully deposited on synthetic 1M phlogopite mica-fluorophlogopite (0Ol) plane at a substrate temperature of 160℃ when the helium gas pressure is 2.667×10-2 Pa. The results indicated that under appropriate helium gas pressure, the energy change of C60 molecules through collisions with helium atoms, and the decrease of the supersaturation of the vapor pressure in the vicinity of the substrate resulted in a quasi-thermodynamic equilibrium deposition system. As a result, well-structured monocrystalline C60 films were deposited on (001) plane of the fluorophlogopite substrate.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
61.05.cp (X-ray diffraction) 34.50.-s (Scattering of atoms and molecules) 65.40.G- (Other thermodynamical quantities)