中国物理B ›› 1993, Vol. 2 ›› Issue (5): 376-385.doi: 10.1088/1004-423X/2/5/006
李金华1, P.L.F.HEMMENT2, Y.LI3, J.A.KILNER3, 林成鲁4, 施左宇4
LIN CHENG-LU (林成鲁)a, P.L.F.HEMMENTb, LI JIN-HUA (李金华)c, SHI ZUO-YU (施左宇)a, Y.LId, J.A.KILNERd
摘要: Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N2+ ions with doses ranging from 4.3×1017 to 1.8×1018 N/cm2 were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose Nc, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N2+ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.
中图分类号: (Nucleation and growth)