中国物理B ›› 1993, Vol. 2 ›› Issue (5): 376-385.doi: 10.1088/1004-423X/2/5/006

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FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

李金华1, P.L.F.HEMMENT2, Y.LI3, J.A.KILNER3, 林成鲁4, 施左宇4   

  1. (1)Changzhou Semiconductor Foctory, Changzhou 213001, China; (2)Department of Electronic and Electrical Engineering, University, of Surrey, Guildford, Surrey GU2 5XH, U.K.; (3)Department of Material, Imperial College, London SW7 2BP,U.K.; (4)Ion Beain Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
  • 收稿日期:1992-07-01 出版日期:1993-05-20 发布日期:1993-05-20

FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

LIN CHENG-LU (林成鲁)a, P.L.F.HEMMENTb, LI JIN-HUA (李金华)c, SHI ZUO-YU (施左宇)a, Y.LId, J.A.KILNERd   

  1. a Ion Beain Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China ; b Department of Electronic and Electrical Engineering, University, of Surrey, Guildford, Surrey GU2 5XH, U.K.; c Changzhou Semiconductor Foctory, Changzhou 213001, China; d Department of Material, Imperial College, London SW7 2BP,U.K.
  • Received:1992-07-01 Online:1993-05-20 Published:1993-05-20

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摘要： Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N2+ ions with doses ranging from 4.3×1017 to 1.8×1018 N/cm2 were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose Nc, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N2+ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.

Abstract: Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N2+ ions with doses ranging from 4.3×1017 to 1.8×1018 N/cm2 were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose Nc, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N2+ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.55.-a (Thin film structure and morphology) 61.72.uj (III-V and II-VI semiconductors) 61.85.+p (Channeling phenomena (blocking, energy loss, etc.) ?) 78.66.Fd (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)