中国物理B ›› 1993, Vol. 2 ›› Issue (11): 807-815.doi: 10.1088/1004-423X/2/11/002
何宇亮, 刘湘娜, 殷晨钟, 张昱
HE YU-LIANG (何宇亮), LIU XIANG-NA (刘湘娜), YIN CHENG-ZHONG (殷晨钟), ZHANG YU (张昱)
摘要: By using strongly hydrogen diluted silane as a reactant gas source [C(=SiH4/(SiH4+H2))<5%] in a conventional diode PECVD system, we have deposited high quality a-Si:H films which exhibit almost no Steable-Wronski (S-W) effect, The [H] radical in rf plasma erodes the growing surface and eliminates the weak Si-Si bonds, thus re-ducing the density of metastable defects of a-Si:H films and causing the amorphous network to be more perfect. Our results show that as C value decreases from 5.4 % to 0.8 %, the peak location of TO mode in Raman spectra changes from 480 to 500 cm-1, the average distortion of bond angles Δθ, which is calculated from the width of half full height of TO peaks, reduces from 9.0° to 3.8°. The hydrogen content CH of the samples which show almost no S-W effect is less than 10at%.
中图分类号: (Nucleation and growth)