中国物理B ›› 1993, Vol. 2 ›› Issue (11): 807-815.doi: 10.1088/1004-423X/2/11/002

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DEPOSITION OF HIGH QUALITY AMORPHOUS SILICON FILMS WITH STRONG HYDROGEN DILUTED SILANE AS REACTANT GAS SOURCE

何宇亮, 刘湘娜, 殷晨钟, 张昱   

  1. Department of Physics, Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
  • 收稿日期:1992-10-15 出版日期:1993-11-20 发布日期:1993-11-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

DEPOSITION OF HIGH QUALITY AMORPHOUS SILICON FILMS WITH STRONG HYDROGEN DILUTED SILANE AS REACTANT GAS SOURCE

HE YU-LIANG (何宇亮), LIU XIANG-NA (刘湘娜), YIN CHENG-ZHONG (殷晨钟), ZHANG YU (张昱)   

  1. Department of Physics, Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
  • Received:1992-10-15 Online:1993-11-20 Published:1993-11-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： By using strongly hydrogen diluted silane as a reactant gas source [C(=SiH4/(SiH4+H2))<5%] in a conventional diode PECVD system, we have deposited high quality a-Si:H films which exhibit almost no Steable-Wronski (S-W) effect, The [H] radical in rf plasma erodes the growing surface and eliminates the weak Si-Si bonds, thus re-ducing the density of metastable defects of a-Si:H films and causing the amorphous network to be more perfect. Our results show that as C value decreases from 5.4 % to 0.8 %, the peak location of TO mode in Raman spectra changes from 480 to 500 cm-1, the average distortion of bond angles Δθ, which is calculated from the width of half full height of TO peaks, reduces from 9.0° to 3.8°. The hydrogen content CH of the samples which show almost no S-W effect is less than 10at%.

Abstract: By using strongly hydrogen diluted silane as a reactant gas source [C(=SiH4/(SiH4+H2))<5%] in a conventional diode PECVD system, we have deposited high quality a-Si:H films which exhibit almost no Steable-Wronski (S-W) effect, The [H] radical in rf plasma erodes the growing surface and eliminates the weak Si-Si bonds, thus re-ducing the density of metastable defects of a-Si:H films and causing the amorphous network to be more perfect. Our results show that as C value decreases from 5.4 % to 0.8 %, the peak location of TO mode in Raman spectra changes from 480 to 500 cm-1, the average distortion of bond angles $\Delta\theta$, which is calculated from the width of half full height of TO peaks, reduces from 9.0° to 3.8°. The hydrogen content CH of the samples which show almost no S-W effect is less than 10at%.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.05.Cy (Elemental semiconductors) 81.05.Gc (Amorphous semiconductors) 78.30.Am (Elemental semiconductors and insulators) 78.66.Db (Elemental semiconductors and insulators)