中国物理B ›› 1993, Vol. 2 ›› Issue (1): 48-55.doi: 10.1088/1004-423X/2/1/007

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GROWTH CHARACTERISTICS OF DIAMOND FILMS DEPOSITED ON Si AND W SUBSTRATES

蒋翔六1, 张仿清2, 张文军2, 张亚菲2, 陈光华2, 高巧君3   

  1. (1)Beijing Institute of Science and Technology, Beijing 100044, China; (2)Department of Physics, Lanzhou University, Lanzhou 730001, China; (3)Department of Physics, Peking University, Beijing 100871, China
  • 收稿日期:1992-01-17 出版日期:1993-01-20 发布日期:1993-01-20

GROWTH CHARACTERISTICS OF DIAMOND FILMS DEPOSITED ON Si AND W SUBSTRATES

ZHANG FANG-QING (张仿清)a, ZHANG WEN-JUN (张文军)a, ZHANG YA-FEI (张亚菲)a, CHEN GUANG-HUA (陈光华)a, GAO QIAO-JUN (高巧君)b, JIANG XIANG-LIU (蒋翔六)c   

  1. a Department of Physics, Lanzhou University, Lanzhou 730001, China; b Department of Physics, Peking University, Beijing 100871, China; c Beijing Institute of Science and Technology, Beijing 100044, China
  • Received:1992-01-17 Online:1993-01-20 Published:1993-01-20

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摘要： Growth characteristics of diamond films synthesized by using a dc arc discharge plasma CVD were studied by means of XRD,SEM and reflection electron diffraction. The results showed that columnar growth of the diamond films was observed, the columns having an average diameter of about 15μm, with sharp and regular base edges. Diamond grains grows on the substrata were initially of uniform polygons. An interfacial transition layer of polycrystalline SiC was observed between the diamond film and Si substrate. Diamond grains grown during the early-stage on W substrate were also uniform, and an interfacial transition layer of polycrystalline WC was observed between the diamond film and the substrate.

Abstract: Growth characteristics of diamond films synthesized by using a dc arc discharge plasma CVD were studied by means of XRD,SEM and reflection electron diffraction. The results showed that columnar growth of the diamond films was observed, the columns having an average diameter of about 15μm, with sharp and regular base edges. Diamond grains grows on the substrata were initially of uniform polygons. An interfacial transition layer of polycrystalline SiC was observed between the diamond film and Si substrate. Diamond grains grown during the early-stage on W substrate were also uniform, and an interfacial transition layer of polycrystalline WC was observed between the diamond film and the substrate.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 52.77.Dq (Plasma-based ion implantation and deposition) 68.55.-a (Thin film structure and morphology) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))