中国物理B ›› 1992, Vol. 1 ›› Issue (3): 191-201.doi: 10.1088/1004-423X/1/3/005
K.MOTAI1, T.HASHIZUME1, T.SAKURAI1, 陆华2, 王向东3
LU HUA (陆华), WANG XIANG-DONG (王向东)a, K.MOTAIb, T.HASHIZUMEb, T.SAKURAIb
摘要: Chemisorption of atomic hydrogen on the Si(100)2×1 surface has been investigated in detail by using a field ion-scanning tunneling microscope (FI-STM). The results showed that the adsorption geometry changed from the 2×1 monohydride phase to the 1×1 dihydride phase with increasing exposure of hydrogen. The data of desorption of the hydrogen-saturated Si surface showed that on annealing at 670K the surface becomes highly disordered: the 1×1 dihydride structure is eliminated and the 2×1 reconstructed monohydride is also hardly to identify. When the temperature rises to as high as 730 K, the surface is domi-nated by the 2×1 structure with missing dimer rows, and some adatom chains occur on the Si substrate ler-races. We attribute the formation of these atomic chains to an epitaxial growth of Si atoms which are formed by the dissociation of SiHx (x= 1, 2, 3 or 4) compounds on the Si surface.
中图分类号: (Adsorbate structure (binding sites, geometry))