中国物理B ›› 1992, Vol. 1 ›› Issue (3): 191-201.doi: 10.1088/1004-423X/1/3/005

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FI-STM STUDY OF HYDROGEN ADSORPTION ON Si(100) SURFACE

K.MOTAI1, T.HASHIZUME1, T.SAKURAI1, 陆华2, 王向东3   

  1. (1)Institute for Materials Research, Tohoku University Aoba-ku, Sendai 980, Japan; (2)Laboratory for Surface Physics, Academia Sinica Beijing 100080, China; (3)Laboratory for Surface Physics, Fudan University, Shanghai 200433, China
  • 收稿日期:1992-01-29 出版日期:1992-03-20 发布日期:1992-03-20

FI-STM STUDY OF HYDROGEN ADSORPTION ON Si(100) SURFACE

LU HUA (陆华), WANG XIANG-DONG (王向东)a, K.MOTAIb, T.HASHIZUMEb, T.SAKURAIb   

  1. Laboratory for Surface Physics, Academia Sinica Beijing 100080, China; a Laboratory for Surface Physics, Fudan University, Shanghai 200433, China; b Institute for Materials Research, Tohoku University Aoba-ku, Sendai 980, Japan
  • Received:1992-01-29 Online:1992-03-20 Published:1992-03-20

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摘要： Chemisorption of atomic hydrogen on the Si(100)2×1 surface has been investigated in detail by using a field ion-scanning tunneling microscope (FI-STM). The results showed that the adsorption geometry changed from the 2×1 monohydride phase to the 1×1 dihydride phase with increasing exposure of hydrogen. The data of desorption of the hydrogen-saturated Si surface showed that on annealing at 670K the surface becomes highly disordered: the 1×1 dihydride structure is eliminated and the 2×1 reconstructed monohydride is also hardly to identify. When the temperature rises to as high as 730 K, the surface is domi-nated by the 2×1 structure with missing dimer rows, and some adatom chains occur on the Si substrate ler-races. We attribute the formation of these atomic chains to an epitaxial growth of Si atoms which are formed by the dissociation of SiHx (x= 1, 2, 3 or 4) compounds on the Si surface.

Abstract: Chemisorption of atomic hydrogen on the Si(100)2×1 surface has been investigated in detail by using a field ion-scanning tunneling microscope (FI-STM). The results showed that the adsorption geometry changed from the 2×1 monohydride phase to the 1×1 dihydride phase with increasing exposure of hydrogen. The data of desorption of the hydrogen-saturated Si surface showed that on annealing at 670K the surface becomes highly disordered: the 1×1 dihydride structure is eliminated and the 2×1 reconstructed monohydride is also hardly to identify. When the temperature rises to as high as 730 K, the surface is domi-nated by the 2×1 structure with missing dimer rows, and some adatom chains occur on the Si substrate ler-races. We attribute the formation of these atomic chains to an epitaxial growth of Si atoms which are formed by the dissociation of SiHx (x= 1, 2, 3 or 4) compounds on the Si surface.

中图分类号:  (Adsorbate structure (binding sites, geometry))

  • 68.43.Fg
68.43.Mn (Adsorption kinetics ?) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM)) 68.35.B- (Structure of clean surfaces (and surface reconstruction)) 82.65.+r (Surface and interface chemistry; heterogeneous catalysis at surfaces) 68.47.Fg (Semiconductor surfaces)