中国物理B ›› 2026, Vol. 35 ›› Issue (4): 48801-048801.doi: 10.1088/1674-1056/ae0638

• • 上一篇    

The 1-MeV electron irradiation effect and damage mechanism analysis of GaInP/GaAs heterojunction solar cells

Kelun Zhao(赵克伦)1, Jiaming Zhou(周佳明)2, Yanqing Zhang(张延清)3,†, Qiang Kang(康强)1, Yang Liu(刘洋)4, Xinyi Li(李欣益)4, Chaoming Liu(刘超铭)2, Tianqi Wang(王天琦)3, and Mingxue Huo(霍明学)2,‡   

  1. 1 School of Physics, Harbin Institute of Technology, Harbin 150001, China;
    2 School of Astronautics, Harbin Institute of Technology, Harbin 150001, China;
    3 Space Environment Simulation Research Infrastructure, Harbin Institute of Technology, Harbin 150001, China;
    4 Shanghai Institute of Space Power Sources, Shanghai 200245, China
  • 收稿日期:2025-07-10 修回日期:2025-08-18 接受日期:2025-09-12 发布日期:2026-04-13
  • 通讯作者: Yanqing Zhang, Mingxue Huo E-mail:yqzhang1983@hit.edu.cn;huomingxue@hit.edu.cn
  • 基金资助:
    Project supported by Shanghai Aerospace Science and Technology Innovation Fund (Grant No. SAST2024- 083), the National Natural Science Foundation of China (Grant Nos. U2341222, U2441248, 12275061, and 12075069), and the Fund for State Key Laboratory (Grant No. 6142806230204).

The 1-MeV electron irradiation effect and damage mechanism analysis of GaInP/GaAs heterojunction solar cells

Kelun Zhao(赵克伦)1, Jiaming Zhou(周佳明)2, Yanqing Zhang(张延清)3,†, Qiang Kang(康强)1, Yang Liu(刘洋)4, Xinyi Li(李欣益)4, Chaoming Liu(刘超铭)2, Tianqi Wang(王天琦)3, and Mingxue Huo(霍明学)2,‡   

  1. 1 School of Physics, Harbin Institute of Technology, Harbin 150001, China;
    2 School of Astronautics, Harbin Institute of Technology, Harbin 150001, China;
    3 Space Environment Simulation Research Infrastructure, Harbin Institute of Technology, Harbin 150001, China;
    4 Shanghai Institute of Space Power Sources, Shanghai 200245, China
  • Received:2025-07-10 Revised:2025-08-18 Accepted:2025-09-12 Published:2026-04-13
  • Contact: Yanqing Zhang, Mingxue Huo E-mail:yqzhang1983@hit.edu.cn;huomingxue@hit.edu.cn
  • Supported by:
    Project supported by Shanghai Aerospace Science and Technology Innovation Fund (Grant No. SAST2024- 083), the National Natural Science Foundation of China (Grant Nos. U2341222, U2441248, 12275061, and 12075069), and the Fund for State Key Laboratory (Grant No. 6142806230204).

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摘要： This study explore the radiation damage effects on GaInP/GaAs heterojunction (HJT) solar cells when subjected to 1-MeV electron irradiation. Light $I$-$V$ measurements show that $V_{\rm oc}$, $J_{\rm sc}$, and $P_{\rm max}$ of the cells exhibit a logarithmic degradation pattern with increasing electron irradiation fluence. Under identical irradiation conditions, the degradation of $J_{\rm sc}$ is substantially less pronounced than that of $V_{\rm oc}$. Under the same conditions, the heterojunction cell shows better radiation resistance, mainly as its $V_{\rm oc}$ degradation rate with fluence increase is lower than the homojunction cell. Spectral response analysis reveals that 1-MeV electron radiation mainly causes longwave zone damage in the GaInP/GaAs HJT cells, which intensifies as irradiation fluence accumulates. Dark characteristic analysis indicates that both recombination and diffusion currents in the cells rise with increasing irradiation fluence, with recombination current dominating the dark current. Deep level transient spectroscopy tests show that 1-MeV electron irradiation introduces four defects (H$_{1}$-H$_{4}$) in the cells, located at H$_{1}$ ($E_{\rm v}+0.717$ eV)/${\rm H}_{1}^{\ast }$ ($E_{\rm v}+0.744$ eV), H$_{2}$ ($E_{\rm v}+0.369 $ eV), H$_{3}$ ($E_{\rm v}+0.282 $ eV), and H$_{4}$ ($E_{\rm v}+0.032 $ eV). Among these, the concentration H$_{1}$ of defects increases most drastically with fluence and directly correlates with the rapid degradation of cell performance under high fluence, making it the crucial factor responsible for the swift degradation of GaInP/GaAs HJT cells under high fluence 1-MeV electron irradiation.

关键词: 1-MeV electron radiation, GaInP/GaAs HJT solar cell, deep level transient spectroscopy (DLTS)

Abstract: This study explore the radiation damage effects on GaInP/GaAs heterojunction (HJT) solar cells when subjected to 1-MeV electron irradiation. Light $I$-$V$ measurements show that $V_{\rm oc}$, $J_{\rm sc}$, and $P_{\rm max}$ of the cells exhibit a logarithmic degradation pattern with increasing electron irradiation fluence. Under identical irradiation conditions, the degradation of $J_{\rm sc}$ is substantially less pronounced than that of $V_{\rm oc}$. Under the same conditions, the heterojunction cell shows better radiation resistance, mainly as its $V_{\rm oc}$ degradation rate with fluence increase is lower than the homojunction cell. Spectral response analysis reveals that 1-MeV electron radiation mainly causes longwave zone damage in the GaInP/GaAs HJT cells, which intensifies as irradiation fluence accumulates. Dark characteristic analysis indicates that both recombination and diffusion currents in the cells rise with increasing irradiation fluence, with recombination current dominating the dark current. Deep level transient spectroscopy tests show that 1-MeV electron irradiation introduces four defects (H$_{1}$-H$_{4}$) in the cells, located at H$_{1}$ ($E_{\rm v}+0.717$ eV)/${\rm H}_{1}^{\ast }$ ($E_{\rm v}+0.744$ eV), H$_{2}$ ($E_{\rm v}+0.369 $ eV), H$_{3}$ ($E_{\rm v}+0.282 $ eV), and H$_{4}$ ($E_{\rm v}+0.032 $ eV). Among these, the concentration H$_{1}$ of defects increases most drastically with fluence and directly correlates with the rapid degradation of cell performance under high fluence, making it the crucial factor responsible for the swift degradation of GaInP/GaAs HJT cells under high fluence 1-MeV electron irradiation.

Key words: 1-MeV electron radiation, GaInP/GaAs HJT solar cell, deep level transient spectroscopy (DLTS)

中图分类号:  (Multijunction solar cells)

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