中国物理B ›› 2013, Vol. 22 ›› Issue (9): 98803-098803.doi: 10.1088/1674-1056/22/9/098803

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Numerical simulation of a triple-junction thin-film solar cell based on μc-Si1-xGex：H

黄振华, 张建军, 倪牮, 曹宇, 胡子阳, 李超, 耿新华, 赵颖   

  1. Institute of Photo-electronics Thin Film Devices and Technique, Nankai University, Tianjin 300071, China; Key Laboratory of Photo-electronics Thin Film Devices and Technique, Tianjin 300071, China; Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education, Nankai University, Tianjin 300071, China
  • 收稿日期:2012-12-01 修回日期:2013-02-26 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), the Natural Science Foundation of Tianjin City, China (Grant No. 12JCQNJC01000), and the Fundamental Research Funds for the Central Universities of China (Grant No. 65012371).

Numerical simulation of a triple-junction thin-film solar cell based on μc-Si1-xGex：H

Huang Zhen-Hua (黄振华), Zhang Jian-Jun (张建军), Ni Jian (倪牮), Cao Yu (曹宇), Hu Zi-Yang (胡子阳), Li Chao (李超), Geng Xin-Hua (耿新华), Zhao Ying (赵颖)   

  1. Institute of Photo-electronics Thin Film Devices and Technique, Nankai University, Tianjin 300071, China; Key Laboratory of Photo-electronics Thin Film Devices and Technique, Tianjin 300071, China; Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education, Nankai University, Tianjin 300071, China
  • Received:2012-12-01 Revised:2013-02-26 Online:2013-07-26 Published:2013-07-26
  • Contact: Zhang Jian-Jun E-mail:jjzhang@nankai.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), the Natural Science Foundation of Tianjin City, China (Grant No. 12JCQNJC01000), and the Fundamental Research Funds for the Central Universities of China (Grant No. 65012371).

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摘要： In this paper, a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell structure is proposed. By the analyses of microelectronic and photonic structures (AMPS-1D) and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction (TRJ) model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si:H/a-SiGe:H/μc-SiGe:H triple cell with an initial efficiency of 12.09% (Voc=2.03 V, FF=0.69, Jsc=8.63 mA/cm2, area=1 cm2) is achieved in our laboratory.

关键词: a-Si：H/a-SiGe：H/μc-SiGe：H, triple-junction solar cell, simulation, analyses of microelectronic and photonic structures (AMPS-1D)

Abstract: In this paper, a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell structure is proposed. By the analyses of microelectronic and photonic structures (AMPS-1D) and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction (TRJ) model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si:H/a-SiGe:H/μc-SiGe:H triple cell with an initial efficiency of 12.09% (Voc=2.03 V, FF=0.69, Jsc=8.63 mA/cm2, area=1 cm2) is achieved in our laboratory.

Key words: a-Si：H/a-SiGe：H/μc-SiGe：H, triple-junction solar cell, simulation, analyses of microelectronic and photonic structures (AMPS-1D)

中图分类号:  (Multijunction solar cells)

  • 88.40.jp
88.50.gj (Modeling, design) 71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))