中国物理B ›› 2025, Vol. 34 ›› Issue (8): 87701-087701.doi: 10.1088/1674-1056/add1bc

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Improved ferroelectricity in Mn-doped HfO2 (111) epitaxial thin films through controlled doping and substrate orientation

Jiayi Gu(顾嘉仪)1, Haiyi Zhang(张海义)1, Weijin Pan(潘炜进)1, Haifeng Bu(卜海峰)1, Zhijian Shen(沈志健)1, Shengchun Shen(沈胜春)1,†, Yuewei Yin(殷月伟)1,‡, and Xiaoguang Li(李晓光)1,2   

  1. 1 Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China;
    2 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • 收稿日期:2025-03-03 修回日期:2025-04-17 接受日期:2025-04-29 出版日期:2025-07-17 发布日期:2025-08-05
  • 通讯作者: Shengchun Shen, Yuewei Yin E-mail:scshen@ustc.edu.cn;yyw@ustc.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52125204, 52250281, 52422209, 92163210, and U21A2066) and the National Key Research and Development Program of China (Grant Nos. 2024YFA1208601, 2022YFB3807602, and 2022YFB3807604).

Improved ferroelectricity in Mn-doped HfO2 (111) epitaxial thin films through controlled doping and substrate orientation

Jiayi Gu(顾嘉仪)1, Haiyi Zhang(张海义)1, Weijin Pan(潘炜进)1, Haifeng Bu(卜海峰)1, Zhijian Shen(沈志健)1, Shengchun Shen(沈胜春)1,†, Yuewei Yin(殷月伟)1,‡, and Xiaoguang Li(李晓光)1,2   

  1. 1 Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China;
    2 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • Received:2025-03-03 Revised:2025-04-17 Accepted:2025-04-29 Online:2025-07-17 Published:2025-08-05
  • Contact: Shengchun Shen, Yuewei Yin E-mail:scshen@ustc.edu.cn;yyw@ustc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52125204, 52250281, 52422209, 92163210, and U21A2066) and the National Key Research and Development Program of China (Grant Nos. 2024YFA1208601, 2022YFB3807602, and 2022YFB3807604).

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摘要： Doped HfO$_2$ as an emerging ferroelectric material, holds considerable promise for non-volatile memory applications. Epitaxial growth of doped HfO$_2$ thin films is widely adopted as an effective technique for revealing the intrinsic ferroelectric properties. In this study, based on systematic structural, chemical and electrical investigations, the influences of Mn doping and substrate orientation on ferroelectric properties of Mn-doped HfO$_2$ epitaxial thin films are investigated. The results demonstrate that Mn-doped HfO$_2$ thin films with orthorhombic phase can be epitaxially grown along [111] out-of-plane direction on both SrTiO$_{3}$ (001) and (110) substrates, and 10% Mn-doping significantly stabilizes the orthorhombic polar phase and enhances the ferroelectric polarization. Interestingly, compared to the films on SrTiO$_{3}$ (001) substrate, the better crystallinity and reduction of oxygen vacancy amount in Mn-doped HfO$_2$ films grown on the SrTiO$_{3}$ (110) substrate are observed, which enhance the remanent polarization and reduce the coercive field. It provides an effective approach for the controllable regulation of defects and the enhancement of intrinsic ferroelectricity in HfO$_2$-based materials.

关键词: HfO$_{2}$-based ferroelectric, substrate orientation, ferroelectricity, defects

Abstract: Doped HfO$_2$ as an emerging ferroelectric material, holds considerable promise for non-volatile memory applications. Epitaxial growth of doped HfO$_2$ thin films is widely adopted as an effective technique for revealing the intrinsic ferroelectric properties. In this study, based on systematic structural, chemical and electrical investigations, the influences of Mn doping and substrate orientation on ferroelectric properties of Mn-doped HfO$_2$ epitaxial thin films are investigated. The results demonstrate that Mn-doped HfO$_2$ thin films with orthorhombic phase can be epitaxially grown along [111] out-of-plane direction on both SrTiO$_{3}$ (001) and (110) substrates, and 10% Mn-doping significantly stabilizes the orthorhombic polar phase and enhances the ferroelectric polarization. Interestingly, compared to the films on SrTiO$_{3}$ (001) substrate, the better crystallinity and reduction of oxygen vacancy amount in Mn-doped HfO$_2$ films grown on the SrTiO$_{3}$ (110) substrate are observed, which enhance the remanent polarization and reduce the coercive field. It provides an effective approach for the controllable regulation of defects and the enhancement of intrinsic ferroelectricity in HfO$_2$-based materials.

Key words: HfO$_{2}$-based ferroelectric, substrate orientation, ferroelectricity, defects

中图分类号:  (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

  • 77.84.-s
77.55.fp (Other ferroelectric films) 77.80.-e (Ferroelectricity and antiferroelectricity)