中国物理B ›› 2024, Vol. 33 ›› Issue (6): 67503-067503.doi: 10.1088/1674-1056/ad3dd8

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Relationship between disorder, magnetism and band topology in Mn(Sb1-xBix)2Te4 single crystals

Ming Xi(席明)1,2 and Hechang Lei(雷和畅)1,2,†   

  1. 1 Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
    2 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
  • 收稿日期:2024-03-18 修回日期:2024-04-06 接受日期:2024-04-12 出版日期:2024-06-18 发布日期:2024-06-18
  • 通讯作者: Hechang Lei E-mail:hlei@ruc.edu.cn
  • 基金资助:
    Project supported by the Beijing Natural Science Foundation (Grant No. Z200005), the National Key R&D Program of China (Grant Nos. 2022YFA1403800 and 2023YFA1406500), the National Natural Science Foundation of China (Grant No. 12274459), and Collaborative Research Project of Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology.

Relationship between disorder, magnetism and band topology in Mn(Sb1-xBix)2Te4 single crystals

Ming Xi(席明)1,2 and Hechang Lei(雷和畅)1,2,†   

  1. 1 Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
    2 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
  • Received:2024-03-18 Revised:2024-04-06 Accepted:2024-04-12 Online:2024-06-18 Published:2024-06-18
  • Contact: Hechang Lei E-mail:hlei@ruc.edu.cn
  • Supported by:
    Project supported by the Beijing Natural Science Foundation (Grant No. Z200005), the National Key R&D Program of China (Grant Nos. 2022YFA1403800 and 2023YFA1406500), the National Natural Science Foundation of China (Grant No. 12274459), and Collaborative Research Project of Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology.

摘要: We investigate the evolution of magnetic properties as well as the content and distribution of Mn for Mn(Sb$_{1-x}$Bi$_{x}$)$_{2}$Te$_{4}$ single crystals grown by large-temperature-gradient chemical vapor transport method. It is found that the ferromagnetic MnSb$_{2}$Te$_{4}$ changes to antiferromagnetism with Bi doping when $x \ge 0.25$. Further analysis implies that the occupations of Mn ions at Sb/Bi site Mn$_{\rm Sb/Bi}$ and Mn site Mn$_{\rm Mn}$ have a strong influence on the magnetic ground states of these systems. With the decrease of Mn$_{\rm Mn}$ and increase of Mn$_{\rm Sb/Bi}$, the system will favor the ferromagnetic ground state. In addition, the rapid decrease of $T_{\rm C/N}$ with increasing Bi content when $x \le 0.25$ and the insensitivity of $T_{\rm N}$ to $x$ when $x > 0.25$ suggest that the main magnetic interaction may change from the Ruderman-Kittel-Kasuya-Yosida type at low Bi doping region to the van-Vleck type in high Bi doped samples.

关键词: magnetic topological insulator, magnetic properties, antisite defects, chemical vapor transport

Abstract: We investigate the evolution of magnetic properties as well as the content and distribution of Mn for Mn(Sb$_{1-x}$Bi$_{x}$)$_{2}$Te$_{4}$ single crystals grown by large-temperature-gradient chemical vapor transport method. It is found that the ferromagnetic MnSb$_{2}$Te$_{4}$ changes to antiferromagnetism with Bi doping when $x \ge 0.25$. Further analysis implies that the occupations of Mn ions at Sb/Bi site Mn$_{\rm Sb/Bi}$ and Mn site Mn$_{\rm Mn}$ have a strong influence on the magnetic ground states of these systems. With the decrease of Mn$_{\rm Mn}$ and increase of Mn$_{\rm Sb/Bi}$, the system will favor the ferromagnetic ground state. In addition, the rapid decrease of $T_{\rm C/N}$ with increasing Bi content when $x \le 0.25$ and the insensitivity of $T_{\rm N}$ to $x$ when $x > 0.25$ suggest that the main magnetic interaction may change from the Ruderman-Kittel-Kasuya-Yosida type at low Bi doping region to the van-Vleck type in high Bi doped samples.

Key words: magnetic topological insulator, magnetic properties, antisite defects, chemical vapor transport

中图分类号:  (Antiferromagnetics)

  • 75.50.Ee
61.82.Ms (Insulators) 75.50.Cc (Other ferromagnetic metals and alloys) 72.80.Ga (Transition-metal compounds)