A design for an antiferromagnetic material based on self-assembly for information storage

doi:10.1088/1674-1056/adc6f5

中国物理B ›› 2025, Vol. 34 ›› Issue (6): 67504-067504.doi: 10.1088/1674-1056/adc6f5

A design for an antiferromagnetic material based on self-assembly for information storage

Si-Yan Gao(高思妍)¹, Yi-Feng Zheng(郑益峰)², Shu-Qiang He(何述强)³, Haiping Fang(方海平)^3,†, and Yue-Yu Zhang(张越宇)^2,‡

1 School of Physics and School of Material Science and Engineering, East China University of Science and Technology, Shanghai 200237, China;
2 Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou 325001, China;
3 School of Physics, East China University of Science and Technology, Shanghai 200237, China

收稿日期:2025-01-07 修回日期:2025-03-18 接受日期:2025-03-31 出版日期:2025-05-16 发布日期:2025-06-06
通讯作者: Haiping Fang, Yue-Yu Zhang E-mail:fanghaiping@sinap.ac.cn;zhangyy@wiucas.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12435001, 12304006, and 12404265), the Natural Science Foundation of Shanghai, China (Grant No. 23JC1401400), the Fundamental Research Funds for the Central Universities of East China University, the Natural Science Foundation of WIUCAS (Grant No. WIUCASQD2023004), and the Natural Science Foundation of Wenzhou (Grant No. L2023005).

A design for an antiferromagnetic material based on self-assembly for information storage

Si-Yan Gao(高思妍)¹, Yi-Feng Zheng(郑益峰)², Shu-Qiang He(何述强)³, Haiping Fang(方海平)^3,†, and Yue-Yu Zhang(张越宇)^2,‡

1 School of Physics and School of Material Science and Engineering, East China University of Science and Technology, Shanghai 200237, China;
2 Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou 325001, China;
3 School of Physics, East China University of Science and Technology, Shanghai 200237, China

Received:2025-01-07 Revised:2025-03-18 Accepted:2025-03-31 Online:2025-05-16 Published:2025-06-06
Contact: Haiping Fang, Yue-Yu Zhang E-mail:fanghaiping@sinap.ac.cn;zhangyy@wiucas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12435001, 12304006, and 12404265), the Natural Science Foundation of Shanghai, China (Grant No. 23JC1401400), the Fundamental Research Funds for the Central Universities of East China University, the Natural Science Foundation of WIUCAS (Grant No. WIUCASQD2023004), and the Natural Science Foundation of Wenzhou (Grant No. L2023005).

1. 2025-067504-SI.pdf(2495KB)

摘要/Abstract

摘要： Antiferromagnetic (AFM) spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets, including non-volatile data storage, higher storage density, and accelerating data processing. However, the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices. Here, we proposed a design idea for an AFM material that is self-assembled from one-dimensional (1D) ferromagnetic (FM) chains. To validate this idea, we screened a two-dimensional (2D) self-assembled CrBr$_{2}$ antiferromagnet of an AFM semiconductor from a large amount of data. This 2D CrBr$_{2}$ antiferromagnet is composed of 1D FM CrBr$_{2}$ chains that are arranged in a staggered and parallel configuration. In this type of antiferromagnet, the write-data operation of information is achieved in 1D FM chains, followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet. These constituent 1D FM chains become decoupled by external perturbations, such as heat, pressure, strain, etc., thereby realizing the read-data operation of information. We anticipate that this antiferromagnet, composed of 1D FM chains, can be realized not only in the 1D to 2D system, but also is expected to expand to 2D to three-dimensional (3D) system, and even 1D to 3D system.

关键词: information storage, self-assembly, 2D antiferromagnet, 1D FM chains

Abstract: Antiferromagnetic (AFM) spintronics have sparked extensive research interest in the field of information storage due to the considerable advantages offered by antiferromagnets, including non-volatile data storage, higher storage density, and accelerating data processing. However, the manipulation and detection of internal AFM order in antiferromagnets hinders their applications in spintronic devices. Here, we proposed a design idea for an AFM material that is self-assembled from one-dimensional (1D) ferromagnetic (FM) chains. To validate this idea, we screened a two-dimensional (2D) self-assembled CrBr$_{2}$ antiferromagnet of an AFM semiconductor from a large amount of data. This 2D CrBr$_{2}$ antiferromagnet is composed of 1D FM CrBr$_{2}$ chains that are arranged in a staggered and parallel configuration. In this type of antiferromagnet, the write-data operation of information is achieved in 1D FM chains, followed by a self-assembly process driving the assembly of 1D FM chains into an antiferromagnet. These constituent 1D FM chains become decoupled by external perturbations, such as heat, pressure, strain, etc., thereby realizing the read-data operation of information. We anticipate that this antiferromagnet, composed of 1D FM chains, can be realized not only in the 1D to 2D system, but also is expected to expand to 2D to three-dimensional (3D) system, and even 1D to 3D system.

Key words: information storage, self-assembly, 2D antiferromagnet, 1D FM chains

中图分类号: (Antiferromagnetics)

75.50.Ee

81.16.Dn (Self-assembly) 72.80.Ga (Transition-metal compounds) 71.15.Mb (Density functional theory, local density approximation, gradient and other corrections) 71.20.-b (Electron density of states and band structure of crystalline solids)

Si-Yan Gao(高思妍), Yi-Feng Zheng(郑益峰), Shu-Qiang He(何述强), Haiping Fang(方海平), and Yue-Yu Zhang(张越宇). A design for an antiferromagnetic material based on self-assembly for information storage[J]. 中国物理B, 2025, 34(6): 67504-067504.

参考文献

[1] Marti X, Fina I, Frontera C, Liu J, Wadley P, He Q, Paull R J, Clarkson J D, Kudrnovský J, Turek I, Kuneš J, Yi D, Chu J H, Nelson C T, You L, Arenholz E, Salahuddin S, Fontcuberta J, Jungwirth T and Ramesh R 2014 Nat. Mater. 13 367
[2] Chen X, Shi S, Shi G, Fan X, Song C, Zhou X, Bai H, Liao L, Zhou Y, Zhang H, Li A, Chen Y, Han X, Jiang S, Zhu Z, Wu H, Wang X, Xue D, Yang H and Pan F 2021 Nat. Mater. 20 800
[3] Dal Din A, Amin O J,Wadley P and Edmonds K W 2024 Npj Spintronics 2 25
[4] Néel L 1971 Science 174 985
[5] Jungwirth T, Marti X,Wadley P andWunderlich J 2016 Nat. Nanotechnol. 11 231
[6] Baltz V, Manchon A, Tsoi M, Moriyama T, Ono T and Tserkovnyak Y 2018 Rev. Mod. Phys. 90 015005
[7] Šmejkal L, Mokrousov Y, Yan B and MacDonald A H 2018 Nat. Phys. 14 242
[8] Tokura Y and Kanazawa N 2020 Chem. Rev. 121 2857
[9] Huang K, Shao D F and Tsymbal E Y 2022 Nano Lett. 22 3349
[10] Nakatsuji S, Kiyohara N and Higo T 2015 Nature 527 212
[11] mejkal L, MacDonald A H, Sinova J, Nakatsuji S and Jungwirth T 2022 Nat. Rev. Mater. 7 482
[12] Yu X Z, Koshibae W, Tokunaga Y, Shibata K, Taguchi Y, Nagaosa N and Tokura Y 2018 Nature 564 95
[13] Han M G, Garlow J A, Liu Y, Zhang H, Li J, DiMarzio D, Knight M W, Petrovic C, Jariwala D and Zhu Y 2019 Nano Lett. 19 7859
[14] Augustin M, Jenkins S, Evans R F L, Novoselov K S and Santos E J G 2021 Nat. Commun. 12 185
[15] Cheong S W and Huang F T 2024 Npj Quantum Mater. 9 13
[16] Fedchenko O, Minár J, Akashdeep A, D’Souza SW, Vasilyev D, Tkach O, Odenbreit L, Nguyen Q, Kutnyakhov D, Wind N, Wenthaus L, Scholz M, Rossnagel K, Hoesch M, Aeschlimann M, Stadtmüller B, Kläui M, Schönhense G, Jungwirth T, Hellenes A B, Jakob G, Šmejkal L, Sinova J and Elmers H J 2024 Sci. Adv. 10 eadj4883
[17] Yan H, Feng Z, Qin P, Zhou X, Guo H,Wang X, Chen H, Zhang X,Wu H, Jiang C and Liu Z 2020 Adv. Mater. 32 1905603
[18] Zelezný J, Wadley P, Olejník K, Hoffmann A and Ohno H 2018 Nat. Phys. 14 220
[19] Han J, Cheng R, Liu L, Ohno H and Fukami S 2023 Nat. Mater. 22 684
[20] Ren Q, Lai K, Chen J, Yu X and Dai J 2023 Chin. Phys. B 32 027201
[21] Gong S J, Gong C, Sun Y Y, TongWY, Duan C G, Chu J H and Zhang X 2018 Proc. Natl. Acad. Sci. USA 115 8511
[22] Lv H, Niu Y, Wu X and Yang J 2021 Nano Lett. 21 7050
[23] Wang Y, Xu X, Zhao X, Ji W, Cao Q, Li S and Li Y 2022 Npj Comput. Mater. 8 218
[24] Šmejkal L, González-Hernández R, Jungwirth T and Sinova J 2020 Sci. Adv. 6 eaaz8809
[25] Šmejkal L, Sinova J and Jungwirth T 2022 Phys. Rev. X 12 031042
[26] Šmejkal L, Sinova J and Jungwirth T 2022 Phys. Rev. X 12 040501
[27] Krempaský J, Šmejkal L, D’souza S W, Hajlaoui M, Springholz G, Uhlírová K, Alarab F, Constantinou P C, Strocov V, Usanov D, Pudelko W R, González-Hernández R, Birk Hellenes A, Jansa Z, Reichlová H, Šobán Z, Gonzalez Betancourt R D, Wadley P, Sinova J, Kriegner D, Minár J, Dil J H and Jungwirth T 2024 Nature 626 517
[28] Li X and Yang J 2016 Natl. Sci. Rev. 3 365
[29] Rimmler B H, Pal B and Parkin S S P 2024 Nat. Rev. Mater. 10 109
[30] Takagi R, Hirakida R, Settai Y, Oiwa R, Takagi H, Kitaori A, Yamauchi K, Inoue H, Yamaura J I, Nishio-Hamane D, Itoh S, Aji S, Saito H, Nakajima T, Nomoto T, Arita R and Seki S 2025 Nat. Mater. 24 63
[31] Zhang Y Y, Gao W, Chen S, et al. 2015 Comput. Mater. Sci. 98 51
[32] Storn R and Price K 1997 J. Global Optim. 11 341
[33] Kresse G and Furthmüller J 1996 Phys. Rev. B 54 11169
[34] Blöchl P E 1994 Phys. Rev. B 50 17953
[35] Kresse G and Joubert D 1999 Phys. Rev. B 59 1758
[36] Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[37] Monkhorst H J and Pack J D 1976 Phys. Rev. B 13 5188
[38] Tkatchenko A and Scheffler M 2009 Phys. Rev. Lett. 102 073005
[39] Heyd J, Scuseria G E and Ernzerhof M 2003 J. Chem. Phys. 118 8207
[40] Togo A and Tanaka I 2015 Scr. Mater. 108 1
[41] Kühne T D, Iannuzzi M, Del Ben M, et al. 2020 J. Chem. Phys. 152 194103
[42] Kan M, Adhikari S and Sun Q 2014 Phys. Chem. Chem. Phys. 61 4990
[43] Kan M, Zhou J, Sun Q, et al. 2013 J. Phys. Chem. Lett. 4 3382
[44] Lan M, Xiang G, Nie Y, et al. 2016 RSC Adv. 6 31758
[45] Liu L, Ren X, Xie J, et al. 2019 Appl. Surf. Sci. 480 300
[46] Liu L and Zhang X https://github.com/golddoushi/mcsolver
[47] Xiang R, Inoue T, Zheng Y, Kumamoto A, Qian Y, Sato Y, Liu M, Tang D, Gokhale D, Guo J, Hisama K, Yotsumoto S, Ogamoto T, Arai H, Kobayashi Y, Zhang H, Hou B, Anisimov A, Maruyama M, Miyata Y, Okada S, Chiashi S, Li Y, Kong J, Kauppinen E I, Ikuhara Y, Suenaga K and Maruyama S 2020 Science 367 537
[48] Yakobson B I and Gogotsi Y 2020 Science 367 506
[49] Xiang H, Lee C, Koo H J, Gong X and Whangbo M H 2013 Dalton Trans. 42 823
[50] Huang B, Clark G, Navarro-Moratalla E, Klein D R, Cheng R, Seyler K L, Zhong D, Schmidgall E, McguireMA, Cobden D H, YaoW, Xiao D, Jarillo-Herrero P and Xu X 2017 Nature 546 270

A design for an antiferromagnetic material based on self-assembly for information storage

A design for an antiferromagnetic material based on self-assembly for information storage

RichHTML

PDF (PC)

赞

补充材料

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Fuzhou Liu(刘福洲), Yu Ding(丁宇), Longfei Li(黎龙飞), Ke Cheng(程可), Fangfu Ye(叶方富), and Mingcheng Yang(杨明成). Interparticle-friction-induced anomalous colloid structure[J]. 中国物理B, 2025, 34(1): 16401-016401.
[2]	Lijie Lei(雷李杰), Shuo Wang(王硕), Xinyuan Zhang(张昕源), Wenjie Lai(赖文杰), Jinyu Wu(吴晋宇), and Yongxiang Gao(高永祥). Phoretic self-assembly of active colloidal molecules[J]. 中国物理B, 2021, 30(5): 56112-056112.
[3]	冼国裕, 张建烁, 刘丽, 周俊, 刘洪涛, 鲍丽宏, 申承民, 李永峰, 秦志辉, 杨海涛. Scalable preparation of water-soluble ink of few-layered WSe₂ nanosheets for large-area electronics[J]. 中国物理B, 2020, 29(6): 66802-066802.
[4]	井立威, 宋俊杰, 张羽溪, 陈乔悦, 黄凯凯, 张寒洁, 何丕模. Adsorption behavior of triphenylene on Ru(0001) investigated by scanning tunneling microscopy[J]. 中国物理B, 2019, 28(7): 76801-076801.
[5]	王红宇, 武敏, 王艺璇, 王浩, 黄晓丽, 杨新一. Phosphine-free synthesis of FeTe₂ nanoparticles and self-assembly into tree-like nanoarchitectures[J]. 中国物理B, 2019, 28(10): 106401-106401.
[6]	柴旭朝, 瞿博阳, 焦岳超, 刘萍, 马彦霞, 王凤歌, 李晓荃, 方向前, 韩平, 张荣. Effect of substrate type on Ni self-assembly process[J]. 中国物理B, 2019, 28(1): 16102-016102.
[7]	耿晓波, 潘俊星, 张进军, 孙敏娜, 岑建勇. Phase transition of a diblock copolymer and homopolymer hybrid system induced by different properties of nanorods[J]. 中国物理B, 2018, 27(5): 58102-058102.
[8]	方钢, 盛楠, 金坦, 许友生, 孙海, 姚军, 庄巍, 方海平. Hydrophobic nanochannel self-assembled by amphipathic Janus particles confined in aqueous nano-space[J]. 中国物理B, 2018, 27(3): 30505-030505.
[9]	刘妮, 李淑鑫, 叶迎春, 姚延立. Enhanced performance of a solar cell based on a layer-by-layer self-assembled luminescence down-shifting layer of core-shell quantum dots[J]. 中国物理B, 2018, 27(12): 127303-127303.
[10]	吴以治, 许小亮, 张海明, 刘玲, 李继超, 杨大宝. Improving self-assembly quality of colloidal crystal guided by statistical design of experiments[J]. 中国物理B, 2017, 26(3): 38105-038105.
[11]	任晓娜, 夏敏, 燕青芝, 葛昌纯. Controllable preparation of tungsten/tungsten carbide nanowires or nanodots in nanostructured carbon with hollow macroporous core/mesoporous shell[J]. 中国物理B, 2017, 26(3): 38103-038103.
[12]	邓礼, 赵玉荣, 周鹏, 徐海, 王延颋. Anisotropic formation mechanism and nanomechanics for the self-assembly process of cross-β peptides[J]. 中国物理B, 2017, 26(12): 128701-128701.
[13]	高洪跃, 刘攀, 曾超, 姚秋香, 郑志强, 刘吉成, 郑华东, 于瀛洁, 曾震湘, 孙涛. Holographic storage of three-dimensional image and data using photopolymer and polymer dispersed liquid crystal films[J]. 中国物理B, 2016, 25(9): 94205-094205.
[14]	邓礼, 赵玉荣, 周鹏, 徐海, 王延颋. Modulation of intra- and inter-sheet interactions in short peptide self-assembly by acetonitrile in aqueous solution[J]. 中国物理B, 2016, 25(12): 128704-128704.
[15]	邓礼, 徐海. Hierarchical processes in β -sheet peptide self-assembly from the microscopic to the mesoscopic level[J]. 中国物理B, 2016, 25(1): 18701-018701.