中国物理B ›› 2025, Vol. 34 ›› Issue (5): 54206-054206.doi: 10.1088/1674-1056/adbbbf
Zhaozhen Chen(陈兆震)1,2, Wenling Li(李文玲)3, Qian Wang(王乾)4, Enfeng Liu(刘恩峰)4, Xinqun Zhang(张新群)3, Jingwei Liu(刘敬伟)3,†, and Zhengsheng Han(韩郑生)1,2,‡
Zhaozhen Chen(陈兆震)1,2, Wenling Li(李文玲)3, Qian Wang(王乾)4, Enfeng Liu(刘恩峰)4, Xinqun Zhang(张新群)3, Jingwei Liu(刘敬伟)3,†, and Zhengsheng Han(韩郑生)1,2,‡
摘要: Silicon nitride (Si$_3$N$_4$) photonic platform has recently attracted increasing attention for Si$_3$N$_4$ photonic integrated circuits $(\rm PIC)$. A diffraction grating with the only etched top-layer in tri-layer Si$_3$N$_4$ optical waveguides is proposed, which shows a simple fabrication process, high upward diffraction efficiency, and lower far-field divergence angle. The measured results of the diffraction grating at a wavelength of 905 nm show the average upward diffraction efficiency of 90.5% and average far-field divergence angle of 0.154$^\circ$, which shows a good agreement with the design results with the upward diffraction efficiency of 91.6% and far-field divergence angle of 0.105$^\circ$.
中图分类号: (Optical elements, devices, and systems)