中国物理B ›› 2008, Vol. 17 ›› Issue (8): 2938-2950.doi: 10.1088/1674-1056/17/8/030

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Structures and electronic properties of SimN8-m(0<m<8) clusters: a density functional theory study

陈宏善1, 张材荣2, 陈玉红2, 王道斌2, 吴有智3   

  1. (1)College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China; (2)Department of Applied Physics, Lanzhou University of Technology, Lanzhou 730050, China; (3)School of Material Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, China
  • 收稿日期:2007-10-21 修回日期:2008-03-20 出版日期:2008-08-20 发布日期:2008-08-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10647006 and 10547007), the Natural Science Foundation of Gansu Province of China (Grant No 3ZS042-B25-023), the Prominent Youth Foundation (Grant No Q200704) of LUT and the Scientific Developmental Foundation of LUT.

Structures and electronic properties of SimN8-m(0<m<8) clusters: a density functional theory study

Zhang Cai-Rong(张材荣)a), Chen Yu-Hong(陈玉红)a), Wang Dao-Bin(王道斌)a), Wu You-Zhi(吴有智)b), and Chen Hong-Shan(陈宏善)c)   

  1. a Department of Applied Physics, Lanzhou University of Technology, Lanzhou 730050, China; b School of Material Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, China; c College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
  • Received:2007-10-21 Revised:2008-03-20 Online:2008-08-20 Published:2008-08-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10647006 and 10547007), the Natural Science Foundation of Gansu Province of China (Grant No 3ZS042-B25-023), the Prominent Youth Foundation (Grant No Q200704) of LUT and the Scientific Developmental Foundation of LUT.

摘要: The geometries, electronic structures and related properties of Si$_{m}$N$_{8 - m}(0

关键词: cluster, structure and properties, density functional theory, silicon nitride

Abstract: The geometries, electronic structures and related properties of Si$_{m}$N$_{8 - m}(0<m<8)$ clusters are studied using density functional theory (DFT) with hybrid functional B3LYP. The calculated results reveal several trends. For any stoichiometric clusters, the lowest energy isomers with an alteration of N and Si atoms are favourable in energy if the numbers of Si and N atoms are large enough to form $\ldots$ Si--N--Si--N$\ldots$ alternative chains. The bond lengths of single Si--N bonds are very close to the corresponding values of the bulk and other Si--N clusters. The geometries for N-rich and Si$_{4}$N$_{4}$ clusters are planar structures, but three-dimensional structures are favourable in energy for Si-rich clusters. With the increase of $m$, the isotropic polarizability and average polarizability increase, the total binding energies generally decrease, the HOMO-LUMO gap and vertical ionization potential oscillate with increasing number of valence electrons, and their values with even valence electrons are larger than those with odd valence electrons. The atomic charges, IR and Raman properties are also reported. 

Key words: cluster, structure and properties, density functional theory, silicon nitride

中图分类号:  (Electronic and magnetic properties of clusters)

  • 36.40.Cg
33.15.Dj (Interatomic distances and angles) 33.15.Ry (Ionization potentials, electron affinities, molecular core binding energy) 33.20.Fb (Raman and Rayleigh spectra (including optical scattering) ?) 36.40.Mr (Spectroscopy and geometrical structure of clusters)