Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

doi:10.1088/1674-1056/ad15f8

中国物理B ›› 2024, Vol. 33 ›› Issue (3): 37504-037504.doi: 10.1088/1674-1056/ad15f8

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Xiong He(何雄)^1,2, Fan-Li Yang(杨凡黎)¹, Hao-Yu Niu(牛浩峪)², Li-Feng Wang(王立峰)¹, Li-Zhi Yi(易立志)¹, Yun-Li Xu(许云丽)¹, Min Liu(刘敏)¹, Li-Qing Pan(潘礼庆)^1,†, and Zheng-Cai Xia(夏正才)^2,‡

1 Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China;
2 Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2023-09-13 修回日期:2023-12-06 接受日期:2023-12-15 出版日期:2024-02-22 发布日期:2024-02-29
通讯作者: Li-Qing Pan, Zheng-Cai Xia E-mail:lpan@ctgu.edu.cn;xia9020@hust.edu.cn
基金资助:
Project supported by the Special Funding for Talents of Three Gorges University (Grant No. 8230202), the National Natural Science Foundation of China (Grant No. 12274258), and National Key R&D Program of China (Grant No. 2016YFA0401003).

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

1 Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China;
2 Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2023-09-13 Revised:2023-12-06 Accepted:2023-12-15 Online:2024-02-22 Published:2024-02-29
Contact: Li-Qing Pan, Zheng-Cai Xia E-mail:lpan@ctgu.edu.cn;xia9020@hust.edu.cn
Supported by:
Project supported by the Special Funding for Talents of Three Gorges University (Grant No. 8230202), the National Natural Science Foundation of China (Grant No. 12274258), and National Key R&D Program of China (Grant No. 2016YFA0401003).

摘要/Abstract

摘要： Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static magnetic field environment at room temperature. However, how to obtain a large room-temperature negative MR effect in them remains to be studied. In this paper, by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side, we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment, but not in a static low magnetic field environment. Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory, we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field. This theoretical analytical model is further confirmed by regulating the geometry size of the device. Our work sheds light on the development of novel magnetic sensing, magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

关键词: magnetoresistance, germanium-based devices, pulsed high magnetic fields

Abstract: Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static magnetic field environment at room temperature. However, how to obtain a large room-temperature negative MR effect in them remains to be studied. In this paper, by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side, we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment, but not in a static low magnetic field environment. Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory, we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field. This theoretical analytical model is further confirmed by regulating the geometry size of the device. Our work sheds light on the development of novel magnetic sensing, magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Key words: magnetoresistance, germanium-based devices, pulsed high magnetic fields

中图分类号: (Magnetotransport phenomena; materials for magnetotransport)

75.47.-m

85.30.-z (Semiconductor devices) 83.60.Np (Effects of electric and magnetic fields)

Xiong He(何雄), Fan-Li Yang(杨凡黎), Hao-Yu Niu(牛浩峪), Li-Feng Wang(王立峰), Li-Zhi Yi(易立志),Yun-Li Xu(许云丽), Min Liu(刘敏), Li-Qing Pan(潘礼庆), and Zheng-Cai Xia(夏正才). Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices[J]. 中国物理B, 2024, 33(3): 37504-037504.

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Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

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