Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device

doi:10.1088/1674-1056/20/6/064202

中国物理B ›› 2011, Vol. 20 ›› Issue (6): 64202-064202.doi: 10.1088/1674-1056/20/6/064202

Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device

孟宪权¹, 吴剑², 吕雪芹², 金鹏², 王占国²

(1)Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China; (2)Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2010-11-06 修回日期:2010-12-17 出版日期:2011-06-15 发布日期:2011-06-15
基金资助:
Project supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, 60776037, and 10775106).

Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device

Wu Jian(吴剑)^a), Lü Xue-Qin(吕雪芹)^a), Jin Peng(金鹏)^a)†, Meng Xian-Quan(孟宪权)^b), and Wang Zhan-Guo(王占国)^a)

^a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^b Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China

Received:2010-11-06 Revised:2010-12-17 Online:2011-06-15 Published:2011-06-15
Supported by:
Project supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, 60776037, and 10775106).

摘要/Abstract

摘要： A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.

关键词: quantum dot, external cavity laser, broadband tuning

Abstract: A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.

Key words: quantum dot, external cavity laser, broadband tuning

中图分类号: (Modulation, tuning, and mode locking)

42.60.Fc

78.67.Hc (Quantum dots) 81.07.Ta (Quantum dots) 81.16.Dn (Self-assembly)

吴剑, 吕雪芹, 金鹏, 孟宪权, 王占国. Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device[J]. 中国物理B, 2011, 20(6): 64202-064202.

Wu Jian(吴剑), Lü Xue-Qin(吕雪芹), Jin Peng(金鹏), Meng Xian-Quan(孟宪权), and Wang Zhan-Guo(王占国). Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device[J]. Chin. Phys. B, 2011, 20(6): 64202-064202.

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Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device

Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device

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