中国物理B ›› 2021, Vol. 30 ›› Issue (6): 64209-064209.doi: 10.1088/1674-1056/abda2b
Long-Pan Wang(汪陇盼)1, Cheng Ren(任承)1,†, De-Zhong Cao(曹德忠)1, Rui-Jun Lan(兰瑞君)1, and Feng Kang(康凤)2
Long-Pan Wang(汪陇盼)1, Cheng Ren(任承)1,†, De-Zhong Cao(曹德忠)1, Rui-Jun Lan(兰瑞君)1, and Feng Kang(康凤)2
摘要: Silicon-based electro-optic modulators are the key devices in integrated optoelectronics. Integration of the graphene layer and the photonic crystal (PC) cavity is a promising way of achieving compact modulators with high efficiency. In this paper, a high-quality (Q) acceptor-type PC nanocavity is employed to integrate with a single-layer graphene for realizing strong modulation. Through tuning the chemical potential of graphene, a large wavelength shift of 2.62 nm and a Q factor modulation of larger than 5 are achieved. A modulation depth (12.8 dB) of the reflection spectrum is also obtained. Moreover, the optimized PC nanocavity has a large free spectral range of 131.59 nm, which can effectively enhance the flexibility of the modulator. It shows that the proposed graphene-based PC nanocavity is a potential candidate for compact, high-contrast, and low-power absorptive modulators in integrated silicon chips.
中图分类号: (Photonic bandgap materials)