中国物理B ›› 2019, Vol. 28 ›› Issue (5): 58101-058101.doi: 10.1088/1674-1056/28/5/058101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Two-step growth of VSe2 films and their photoelectric properties

Yu Zeng(曾玉), Shengli Zhang(张生利), Xiuling Li(李秀玲), Jianping Ao(敖建平), Yun Sun(孙云), Wei Liu(刘玮), Fangfang Liu(刘芳芳), Peng Gao(高鹏), Yi Zhang(张毅)   

  1. 1 Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China;
    2 Tianjin Institute of Power Source, Tianjin 300384, China
  • 收稿日期:2019-02-01 修回日期:2019-02-28 出版日期:2019-05-05 发布日期:2019-05-05
  • 通讯作者: Yi Zhang E-mail:yizhang@nankai.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51572132, 61674082, and 61774089), the National Key R&D Program of China (Grant No. 2018YFB1500202), Tianjin Natural Science Foundation of Key Project, China (Grant Nos. 18JCZDJC31200 and 16JCZDJC30700), Yang Fan Innovative and Entrepreneurial Research Team Project, China (Grant No. 2014YT02N037), 111 Project, China (Grant No. B16027), and the International Cooperation Base, China (Grant No. 2016D01025).

Two-step growth of VSe2 films and their photoelectric properties

Yu Zeng(曾玉)1, Shengli Zhang(张生利)1, Xiuling Li(李秀玲)1, Jianping Ao(敖建平)1, Yun Sun(孙云)1, Wei Liu(刘玮)1, Fangfang Liu(刘芳芳)1, Peng Gao(高鹏)2, Yi Zhang(张毅)1   

  1. 1 Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, China;
    2 Tianjin Institute of Power Source, Tianjin 300384, China
  • Received:2019-02-01 Revised:2019-02-28 Online:2019-05-05 Published:2019-05-05
  • Contact: Yi Zhang E-mail:yizhang@nankai.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51572132, 61674082, and 61774089), the National Key R&D Program of China (Grant No. 2018YFB1500202), Tianjin Natural Science Foundation of Key Project, China (Grant Nos. 18JCZDJC31200 and 16JCZDJC30700), Yang Fan Innovative and Entrepreneurial Research Team Project, China (Grant No. 2014YT02N037), 111 Project, China (Grant No. B16027), and the International Cooperation Base, China (Grant No. 2016D01025).

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摘要：

We put forward a two-step route to synthesize vanadium diselenide (VSe2), a typical transition metal dichalcogenide (TMD). To obtain the VSe2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400 circC selenization temperature, we successfully prepare VSe2 films on both glass and Mo substrates. The prepared VSe2 has the characteristic of preferential growth along the c-axis, with low transmittance. It is found that the contact between Al and VSe2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe2/Mo sample reveal that the VSe2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe2 in photovoltaic devices.

关键词: two-step route, VSe2, selenization, thin film

Abstract:

We put forward a two-step route to synthesize vanadium diselenide (VSe2), a typical transition metal dichalcogenide (TMD). To obtain the VSe2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400 circC selenization temperature, we successfully prepare VSe2 films on both glass and Mo substrates. The prepared VSe2 has the characteristic of preferential growth along the c-axis, with low transmittance. It is found that the contact between Al and VSe2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe2/Mo sample reveal that the VSe2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe2 in photovoltaic devices.

Key words: two-step route, VSe2, selenization, thin film

中图分类号:  (Growth in vacuum)

  • 81.10.Pq
81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 81.15.Dj (E-beam and hot filament evaporation deposition) 81.20.-n (Methods of materials synthesis and materials processing)