中国物理B ›› 2019, Vol. 28 ›› Issue (4): 46102-046102.doi: 10.1088/1674-1056/28/4/046102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Delta-doped quantum wire tunnel junction for highly concentrated solar cells

Ali Bahrami, Mahyar Dehdast, Shahram Mohammadnejad, Habib Badri Ghavifekr   

  1. 1 Optoelectronics and Nanophotonics Research Laboratory(ONRL), Electrical and Electronics Engineering Department, Sahand University of Technology, Tabriz, Iran;
    2 Nanoptronics Research Center, Electrical and Electronics Engineering Department, Iran University of Science and Technology, Tehran, Iran;
    3 Microelectronics Research Laboratory, Department of Electrical Engineering, Sahand University of Technology, Tabriz, Iran
  • 收稿日期:2018-12-02 修回日期:2019-02-15 出版日期:2019-04-05 发布日期:2019-04-05
  • 通讯作者: Ali Bahrami E-mail:bahrami@sut.ac.ir

Delta-doped quantum wire tunnel junction for highly concentrated solar cells

Ali Bahrami1, Mahyar Dehdast2, Shahram Mohammadnejad2, Habib Badri Ghavifekr3   

  1. 1 Optoelectronics and Nanophotonics Research Laboratory(ONRL), Electrical and Electronics Engineering Department, Sahand University of Technology, Tabriz, Iran;
    2 Nanoptronics Research Center, Electrical and Electronics Engineering Department, Iran University of Science and Technology, Tehran, Iran;
    3 Microelectronics Research Laboratory, Department of Electrical Engineering, Sahand University of Technology, Tabriz, Iran
  • Received:2018-12-02 Revised:2019-02-15 Online:2019-04-05 Published:2019-04-05
  • Contact: Ali Bahrami E-mail:bahrami@sut.ac.ir

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摘要：

We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration. The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.

关键词: delta-doping, quantum wire, solar cell, tunnel junction

Abstract:

We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration. The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.

Key words: delta-doping, quantum wire, solar cell, tunnel junction

中图分类号:  (Defects and impurities in crystals; microstructure)

  • 61.72.-y
68.65.La (Quantum wires (patterned in quantum wells)) 88.40.H- (Solar cells (photovoltaics)) 73.43.Jn (Tunneling)