Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor

doi:10.1088/1674-1056/28/1/017304

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17304-017304.doi: 10.1088/1674-1056/28/1/017304

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor

Shuopei Wang(王硕培), Congli He(何聪丽), Jian Tang(汤建), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇)

1 CAS Key Laboratory of Nanoscale Physics and Devices;Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China;
4 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
5 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2018-10-25 修回日期:2018-11-14 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Congli He, Guangyu Zhang E-mail:conglihe@bnu.edu.cn;gyzhang@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11834017), the Strategic Priority Research Program of Chinese Academy of Sciences (CAS) (Grant No. XDB30000000), the Key Research Program of Frontier Sciences of the CAS (Grant No. QYZDB-SSW-SLH004), the National Key R&D Program of China (Grant No. 2016YFA0300904), and the Fundamental Research Funds for the Central Universities, China (Grant No. 310421101).

Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor

Shuopei Wang(王硕培)^1,2, Congli He(何聪丽)^1,3, Jian Tang(汤建)^1,2, Rong Yang(杨蓉)^1,4, Dongxia Shi(时东霞)^1,2,4, Guangyu Zhang(张广宇)^1,2,4,5

1 CAS Key Laboratory of Nanoscale Physics and Devices;Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China;
4 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
5 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2018-10-25 Revised:2018-11-14 Online:2019-01-05 Published:2019-01-05
Contact: Congli He, Guangyu Zhang E-mail:conglihe@bnu.edu.cn;gyzhang@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11834017), the Strategic Priority Research Program of Chinese Academy of Sciences (CAS) (Grant No. XDB30000000), the Key Research Program of Frontier Sciences of the CAS (Grant No. QYZDB-SSW-SLH004), the National Key R&D Program of China (Grant No. 2016YFA0300904), and the Fundamental Research Funds for the Central Universities, China (Grant No. 310421101).

摘要/Abstract

摘要：

Synapse emulation is very important for realizing neuromorphic computing, which could overcome the energy and throughput limitations of today's computing architectures. Memristors have been extensively studied for using in nonvolatile memory storage and neuromorphic computing. In this paper, we report the fabrication of vertical sandwiched memristor device using ultrathin quasi-two-dimensional gallium oxide produced by squeegee method. The as-fabricated two-terminal memristor device exhibited the essential functions of biological synapses, such as depression and potentiation of synaptic weight, transition from short time memory to long time memory, spike-timing-dependent plasticity, and spike-rate-dependent plasticity. The synaptic weight of the memristor could be tuned by the applied voltage pulse, number, width, and frequency. We believe that the injection of the top Ag cations should play a significant role for the memristor phenomenon. The ultrathin of medium layer represents an advance to integration in vertical direction for future applications and our results provide an alternative way to fabricate synaptic devices.

关键词: gallium oxide, memristor, artificial synapse, synaptic plasticity

Abstract:

Key words: gallium oxide, memristor, artificial synapse, synaptic plasticity

中图分类号: (Electronic transport phenomena in thin films)

73.50.-h

68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties) 87.19.lv (Learning and memory)

王硕培, 何聪丽, 汤建, 杨蓉, 时东霞, 张广宇. Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor[J]. 中国物理B, 2019, 28(1): 17304-017304.

Shuopei Wang(王硕培), Congli He(何聪丽), Jian Tang(汤建), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇). Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor[J]. Chin. Phys. B, 2019, 28(1): 17304-017304.

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Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor

Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor

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