Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures

doi:10.1088/1674-1056/27/9/097307

中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97307-097307.doi: 10.1088/1674-1056/27/9/097307

所属专题： TOPICAL REVIEW — Spin manipulation in solids

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures

Minhao Zhang(张敏昊), Xuefeng Wang(王学锋), Fengqi Song(宋凤麒), Rong Zhang(张荣)

1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 School of Physics, Nanjing University, Nanjing 210093, China;
3 National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

收稿日期:2018-04-29 修回日期:2018-05-18 出版日期:2018-09-05 发布日期:2018-09-05
通讯作者: Xuefeng Wang, Rong Zhang E-mail:xfwang@nju.edu.cn;rzhang@nju.edu.cn
基金资助:
Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921103 and 2017YFA0206304), the National Natural Science Foundation of China (Grant Nos. 61822403, 11874203, U1732159, and U1732273), Fundamental Research Funds for the Central Universities, China (Grant No. 021014380080), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, China.

Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures

Minhao Zhang(张敏昊)¹, Xuefeng Wang(王学锋)^1,3, Fengqi Song(宋凤麒)^2,3, Rong Zhang(张荣)^1,3

1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 School of Physics, Nanjing University, Nanjing 210093, China;
3 National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Received:2018-04-29 Revised:2018-05-18 Online:2018-09-05 Published:2018-09-05
Contact: Xuefeng Wang, Rong Zhang E-mail:xfwang@nju.edu.cn;rzhang@nju.edu.cn
Supported by:
Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921103 and 2017YFA0206304), the National Natural Science Foundation of China (Grant Nos. 61822403, 11874203, U1732159, and U1732273), Fundamental Research Funds for the Central Universities, China (Grant No. 021014380080), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, China.

摘要/Abstract

摘要：

Recently, spin-momentum-locked topological surface states (SSs) have attracted significant attention in spintronics. Owing to spin-momentum locking, the direction of the spin is locked at right angles with respect to the carrier momentum. In this paper, we briefly review the exotic transport properties induced by topological SSs in topological-insulator (TI) nanostructures, which have larger surface-to-volume ratios than those of bulk TI materials. We discuss the electrical spin generation in TIs and its effect on the transport properties. A current flow can generate a pure in-plane spin polarization on the surface, leading to a current-direction-dependent magnetoresistance in spin valve devices based on TI nanostructures. A relative momentum shift of two coupled topological SSs also generates net spin polarization and induces an in-plane anisotropic negative magnetoresistance. Therefore, the spin-momentum locking can enable the broad tuning of the spin transport properties of topological devices for spintronic applications.

关键词: spin-momentum locking, electrical spin generation, topological insulators, topological devices, spintronics

Abstract:

Key words: spin-momentum locking, electrical spin generation, topological insulators, topological devices, spintronics

中图分类号: (Galvanomagnetic and other magnetotransport effects)

73.50.Jt

05.30.Rt (Quantum phase transitions)

张敏昊, 王学锋, 宋凤麒, 张荣. Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures[J]. 中国物理B, 2018, 27(9): 97307-097307.

Minhao Zhang(张敏昊), Xuefeng Wang(王学锋), Fengqi Song(宋凤麒), Rong Zhang(张荣). Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures[J]. Chin. Phys. B, 2018, 27(9): 97307-097307.

参考文献 102

[1]	Fu L, Kane C L and Mele E J 2007 Phys. Rev. Lett. 98 106803 doi: 10.1103/PhysRevLett.98.106803
[2]	Moore J E and Balents L 2007 Phys. Rev. B 75 121306 doi: 10.1103/PhysRevB.75.121306
[3]	Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045 doi: 10.1103/RevModPhys.82.3045
[4]	Qi X L and Zhang S C 2011 Rev. Mod. Phys. 83 1057 doi: 10.1103/RevModPhys.83.1057
[5]	Burkov A A and Hawthorn D G 2010 Phys. Rev. Lett. 105 066802 doi: 10.1103/PhysRevLett.105.066802
[6]	Culcer D, Hwang E H, Stanescu T D and Sarma S D 2010 Phys. Rev. B 82 155457 doi: 10.1103/PhysRevB.82.155457
[7]	Yazyev O, Moore J and Louie S 2010 Phys. Rev. Lett. 105 266806 doi: 10.1103/PhysRevLett.105.266806
[8]	Li X and Yang J 2016 Natl. Sci. Rev. 3 365 doi: 10.1093/nsr/nww026
[9]	Hsieh D, Qian D, Wray L, Xia Y, Hor Y S, Cava R J and Hasan M Z 2008 Nature 452 970 doi: 10.1038/nature06843
[10]	Zhang H, Liu C X, Qi X L, Dai X, Fang Z and Zhang S C 2009 Nat. Phys. 5 438 doi: 10.1038/nphys1270
[11]	Xia Y, Qian D, Hsieh D, Wray L, Pal A, Lin H, Bansil A, Grauer D, Hor Y S, Cava R J and Hasan M Z 2009 Nat. Phys. 5 398 doi: 10.1038/nphys1274
[12]	Hsieh D, Xia Y, Qian D, Wray L, Dil J H, Meier F, Osterwalder J, Patthey L, Checkelsky J G, Ong N P, Fedorov A V, Lin H, Bansil A, Grauer D, Hor Y S, Cava R J and Hasan M Z 2009 Nature 460 1101 doi: 10.1038/nature08234
[13]	Chen Y L, Analytis J G, Chu J H, Liu Z K, Mo S K, Qi X L, Zhang H J, Lu D H, Dai X, Fang Z, Zhang S C, Fisher I R, Hussain Z and Shen Z X 2009 Science 325 178 doi: 10.1126/science.1173034
[14]	Ren Z, Taskin A A, Sasaki S, Segawa K and Ando Y 2010 Phys. Rev. B 82 241306 doi: 10.1103/PhysRevB.82.241306
[15]	Xiong J, Petersen A C, Qu D X, Hor Y S, Cava R J and Ong N P 2012 Physica E 44 917 doi: 10.1016/j.physe.2011.09.011
[16]	Arakane T, Sato T, Souma S, Kosaka K, Nakayama K, Komatsu M, Takahashi T, Zhi R, Segawa K and Ando Y 2012 Nat. Commun. 3 636 doi: 10.1038/ncomms1639
[17]	Xia B, Ren P, Sulaev A, Liu P, Shen S Q and Wang L 2013 Phys. Rev. B 87 085442 doi: 10.1103/PhysRevB.87.085442
[18]	Xu Y, Miotkowski I, Liu C, Tian J, Nam H, Alidoust N, Hu J, Shih C K, Hasan M Z and Chen Y P 2014 Nat. Phys. 10 956 doi: 10.1038/nphys3140
[19]	Zhang S, Pi L, Wang R, Yu G, Pan X C, Wei Z, Zhang J, Xi C, Bai Z, Fei F, Wang M, Liao J, Li Y, Wang X, Song F, Zhang Y, Wang B, Xing D and Wang G 2017 Nat. Commun. 8 977 doi: 10.1038/s41467-017-01065-7
[20]	Chen T, Liu W, Zheng F, Gao M, Pan X, Van d L G, Wang X, Zhang Q, Song F, Wang B, Wang B, Xu Y, Wang G and Zhang R 2015 Adv. Mater. 27 4823 doi: 10.1002/adma.201501254
[21]	Chen T, Chen Q, Schouteden K, Huang W, Wang X, Li Z, Miao F, Wang X, Li Z, Zhao B, Li S, Song F, Wang J, Wang B, Van Haesendonck C and Wang G 2014 Nat. Commun. 5 5022 doi: 10.1038/ncomms6022
[22]	Zhang M, Li Y, Song F, Wang X and Zhang R 2017 Chin. Phys. B 26 127305 doi: 10.1088/1674-1056/26/12/127305
[23]	Wang X, Pan X, Gao M, Yu J, Jiang J, Zhang J, Zuo H, Zhang M, Wei Z, Niu W, Xia Z, Wan X, Chen Y, Song F, Xu Y, Wang B, Wang G and Zhang R 2016 Adv. Electron. Mater. 2 1600228 doi: 10.1002/aelm.201600228
[24]	Pan X C, Chen X, Liu H, Feng Y, Wei Z, Zhou Y, Chi Z, Pi L, Yen F, Song F, Wan X, Yang Z, Wang B, Wang G and Zhang Y 2015 Nat. Commun. 6 7805 doi: 10.1038/ncomms8805
[25]	Nielsen H B and Ninomiya M 1981 Phys. Lett. B 105 219 doi: 10.1016/0370-2693(81)91026-1
[26]	Yoshimi R, Tsukazaki A, Kozuka Y, Falson J, Takahashi K S, Checkelsky J G, Nagaosa N, Kawasaki M and Tokura Y 2015 Nat. Commun. 6 6627 doi: 10.1038/ncomms7627
[27]	Yan Y, Liao Z M, Zhou Y B, Wu H C, Bie Y Q, Chen J J, Meng J, Wu X S and Yu D P 2013 Sci. Rep. 3 1264 doi: 10.1038/srep01264
[28]	Kong D, Randel J C, Peng H, Cha J J, Meister S, Lai K, Chen Y, Shen Z X, Manoharan H C and Cui Y 2010 Nano Lett. 10 329 doi: 10.1021/nl903663a
[29]	Pan H, Zhang K, Wei Z, Wang J, Han M, Song F, Wang X, Wang B and Zhang R 2017 Appl. Phys. Lett. 110 053108 doi: 10.1063/1.4975386
[30]	Zhang K, Pan H, Wei Z, Zhang M, Song F, Wang X and Zhang R 2017 Chin. Phys. B 26 324
[31]	Zhang K, Pan H, Zhang M, Wei Z, Gao M, Song F, Wang X and Zhang R 2017 Rsc Adv. 7 17689 doi: 10.1039/C7RA02847D
[32]	Niu W, Du K, Wang S, Zhang M, Gao M, Chen Y, Liu H, Zhou W, Song F, Wang P, Xu Y, Wang X, Shen J and Zhang R 2017 Nanoscale 9 12372 doi: 10.1039/C7NR02807E
[33]	Xiu F, He L, Wang Y, Cheng L, Chang L T, Lang M, Huang G, Kou X, Zhou Y, Jiang X, Chen Z, Zou J, Shailos A and Wang K 2011 Nat. Nanotech. 6 216 doi: 10.1038/nnano.2011.19
[34]	Jauregui L A, Pettes M T, Rokhinson L P, Shi L and Chen Y P 2016 Nat. Nanotech. 11 345 doi: 10.1038/nnano.2015.293
[35]	Kong D, Koski K J, Cha J J, Hong S S and Cui Y 2013 Nano Lett. 13 632 doi: 10.1021/nl304212u
[36]	Fei F, Wei Z, Wang Q J, Lu P, Wang S, Qin Y, Pan D, Zhao B, Wang X, Sun J, Wang X, Wang P, Wan J, Zhou J, Han M, Song F, Wang B and Wang G 2015 Nano Lett. 15 5905 doi: 10.1021/acs.nanolett.5b01987
[37]	Baibich M N, Broto J M, Fert A, Van Dau F N, Petroff F, Etienne P, Creuzet G, Friederich A and Chazelas J 1988 Phys. Rev. Lett. 61 2472 doi: 10.1103/PhysRevLett.61.2472
[38]	Barnaś J, Fuss A, Camley R, Grünberg P and Zinn W 1990 Phys. Rev. B 42 8110 doi: 10.1103/PhysRevB.42.8110
[39]	Zhou Y, Yang C S, Yu J Q, Zhao X L and Mao H P 2000 Chin. Phys. Lett. 17 835 doi: 10.1088/0256-307X/17/11/020
[40]	Huang L, Liu L, Wang R and Hu L 2017 Chin. Phys. B 26 077201 doi: 10.1088/1674-1056/26/7/077201
[41]	Jedema F J, Filip A and Van Wees B 2001 Nature 410 345 doi: 10.1038/35066533
[42]	Jedema F, Heersche H, Filip A, Baselmans J and Van Wees B 2002 Nature 416 713 doi: 10.1038/416713a
[43]	Jonker B T, Kioseoglou G, Hanbicki A T, Li C H and Thompson P E 2007 Nat. Phys. 3 542 doi: 10.1038/nphys673
[44]	Dash S P, Sharma S, Patel R S, de Jong M P and Jansen R 2009 Nature 462 491 doi: 10.1038/nature08570
[45]	Zhou Y, Han W, Chang L T, Xiu F, Wang M, Oehme M, Fischer I A, Schulze J, Kawakami R K and Wang K L 2011 Phys. Rev. B 84 125323 doi: 10.1103/PhysRevB.84.125323
[46]	Jeon K R, Min B C, Jo Y H, Lee H S, Shin I J, Park C Y, Park S Y and Shin S C 2011 Phys. Rev. B 84 165315 doi: 10.1103/PhysRevB.84.165315
[47]	Lou X, Adelmann C, Crooker S A, Garlid E S, Zhang J, Reddy K M, Flexner S D, Palmstrom C J and Crowell P A 2007 Nat. Phys. 3 197 doi: 10.1038/nphys543
[48]	Zhu H, Ramsteiner M, Kostial H, Wassermeier M, Schönherr H P and Ploog K 2001 Phys. Rev. Lett. 87 016601 doi: 10.1103/PhysRevLett.87.016601
[49]	Tombros N, Jozsa C, Popinciuc M, Jonkman H T and Van Wees B J 2007 Nature 448 571 doi: 10.1038/nature06037
[50]	Han W, Pi K, McCreary K, Li Y, Wong J J, Swartz A and Kawakami R 2010 Phys. Rev. Lett. 105 167202 doi: 10.1103/PhysRevLett.105.167202
[51]	Kamalakar M V, Groenveld C, Dankert A and Dash S P 2015 Nat. Commun. 6 6766 doi: 10.1038/ncomms7766
[52]	Datta S and Das B 1990 Appl. Phys. Lett. 56 665 doi: 10.1063/1.102730
[53]	Johnson M 1993 Science 260 320 doi: 10.1126/science.260.5106.320
[54]	Sugahara S and Tanaka M 2004 Appl. Phys. Lett. 84 2307 doi: 10.1063/1.1689403
[55]	Sasaki T, Ando Y, Kameno M, Tahara T, Koike H, Oikawa T, Suzuki T and Shiraishi M 2014 Phys. Rev. Appl. 2 034005 doi: 10.1103/PhysRevApplied.2.034005
[56]	Xu S Y, Xia Y, Wray L A, Jia S, Meier F, Dil J H, Osterwalder J, Slomski B, Bansil A, Lin H, Cava R J and Hasan M Z 2011 Science 332 560 doi: 10.1126/science.1201607
[57]	Mciver J W, Hsieh D, Steinberg H, Jarillo Herrero P and Gedik N 2012 Nat. Nanotech. 7 96 doi: 10.1038/nnano.2011.214
[58]	Park C H and Louie S G 2012 Phys. Rev. Lett. 109 097601 doi: 10.1103/PhysRevLett.109.097601
[59]	Li C, van't Erve O, Robinson J, Liu Y, Li L and Jonker B 2014 Nat. Nanotech. 9 218 doi: 10.1038/nnano.2014.16
[60]	Tian J, Childres I, Cao H, Shen T, Miotkowski I and Chen Y P 2014 Solid State Commun. 191 1
[61]	André D, Johannes G, M Venkata K, Sophie C and Dash S P 2015 Nano Lett. 15 7976 doi: 10.1021/acs.nanolett.5b03080
[62]	Ando Y, Hamasaki T, Kurokawa T, Ichiba K, Yang F, Novak M, Sasaki S, Segawa K, Ando Y and Shiraishi M 2014 Nano Lett. 14 6226 doi: 10.1021/nl502546c
[63]	Tang J, Chang L T, Kou X, Murata K, Choi E S, Lang M, Fan Y, Jiang Y, Montazeri M, Jiang W, Wang Y, He L and Wang K 2014 Nano Lett. 14 5423 doi: 10.1021/nl5026198
[64]	Lee J S, Richardella A, Hickey D R, Mkhoyan K A and Samarth N 2015 Phys. Rev. B 92 155312 doi: 10.1103/PhysRevB.92.155312
[65]	Tian J, Miotkowski I, Hong S and Chen Y P 2015 Sci. Rep. 5 14293 doi: 10.1038/srep14293
[66]	Zhang M, Wang X, Zhang S, Gao Y, Yu Z, Zhang X, Gao M, Song F, Du J, Wang X, He L, Xu Y and Zhang R 2016 IEEE Electron. Dev. Lett. 37 1231
[67]	Vaklinova K, Hoyer A, Burghard M and Kern K 2016 Nano Lett. 16 2595 doi: 10.1021/acs.nanolett.6b00167
[68]	Zhao C J, Ding L, Huangfu J S, Zhang J Y and Yu G H 2013 Rare Met. 32 213 doi: 10.1007/s12598-013-0090-5
[69]	Xu Y and Cai J W 2011 Acta Phys. Sin. 60 117308 (in Chinese)
[70]	Xiong J W, Hu L B and Zhang Z X 2006 Chin. Phys. Lett. 23 1278 doi: 10.1088/0256-307X/23/5/059
[71]	Sulaev A, Zeng M, Shen S Q, Cho S K, Wei G Z, Yuan P F, Eremeev S V, Kawazoe Y, Lei S and Lan W 2015 Nano Lett. 15 2061 doi: 10.1021/nl504956s
[72]	Cha J J, Claassen M, Kong D, Hong S S, Koski K J, Qi X L and Yi C 2012 Nano Lett. 12 4355 doi: 10.1021/nl3021472
[73]	Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q and Lu L 2010 Phys. Rev. Lett. 105 176602 doi: 10.1103/PhysRevLett.105.176602
[74]	Liu M, Zhang J, Chang C Z, Zhang Z, Feng X, Li K, He K, Wang L L, Chen X, Dai X, Fang Z, Xue Q K, Ma X and Wang Y 2012 Phys. Rev. Lett. 108 036805 doi: 10.1103/PhysRevLett.108.036805
[75]	Yong S K, Brahlek M, Bansal N, Edrey E, Kapilevich G A, Iida K, Tanimura M, Horibe Y, Cheong S W and Oh S 2011 Phys. Rev. B 84 073109 doi: 10.1103/PhysRevB.84.073109
[76]	Brahlek M, Koirala N, Salehi M, Bansal N and Oh S 2014 Phys. Rev. Lett. 113 026801 doi: 10.1103/PhysRevLett.113.026801
[77]	Bansal N, Yong S K, Brahlek M, Edrey E and Oh S 2012 Phys. Rev. Lett. 109 116804 doi: 10.1103/PhysRevLett.109.116804
[78]	Lu H Z, Shi J and Shen S Q 2011 Phys. Rev. Lett. 107 076801 doi: 10.1103/PhysRevLett.107.076801
[79]	Liu M, Chang C Z, Zhang Z, Zhang Y, Wei R, He K, Wang L, Chen X, Jia J F, Zhang S C, Xue Q K, Ma X and Wang Y 2010 Phys. Rev. B 83 165440
[80]	Cha J J, Kong D, Hong S S, Analytis J G, Lai K and Cui Y 2012 Nano Lett. 12 1107 doi: 10.1021/nl300018j
[81]	Lee J, Park J, Lee J H, Kim J S and Lee H J 2012 Phys. Rev. B 86 245321 doi: 10.1103/PhysRevB.86.245321
[82]	Taskin A A, Sasaki S, Segawa K and Ando Y 2012 Phys. Rev. Lett. 109 066803 doi: 10.1103/PhysRevLett.109.066803
[83]	Steinberg H, Lalo J B, Fatemi V, Moodera J S and Jarilloherrero P 2011 Phys. Rev. B 84 233101 doi: 10.1103/PhysRevB.84.233101
[84]	Li Z, Garate I, Pan J, Wan X, Chen T, Ning W, Zhang X, Song F, Meng Y, Hong X, Wang X, Pi L, Wang X, Wang B, Li S, Reed M A, Glazman L and Wang G 2015 Phys. Rev. B 91 041401
[85]	Sato T, Segawa K, Kosaka K, Souma S, Nakayama K, Eto K, Minami T, Ando Y and Takahashi T 2011 Nat. Phys. 7 840 doi: 10.1038/nphys2058
[86]	Brahlek M, Bansal N, Koirala N, Xu S Y, Neupane M, Liu C, Hasan M Z and Oh S 2012 Phys. Rev. Lett. 109 186403 doi: 10.1103/PhysRevLett.109.186403
[87]	Xu S Y, Neupane M, Belopolski I, Liu C, Alidoust N, Bian G, Jia S, Landolt G, Slomski B, Dil J H, Shibayev P P, Basak S, Chang T R, Jeng H T, Cava R J, Lin H Bansil A and Hasan M Z 2015 Nat. Commun. 6 6870 doi: 10.1038/ncomms7870
[88]	Lou R, Liu Z, Jin W, Wang H, Han Z, Liu K, Wang X, Qian T, Kushnirenko Y, Cheong S W, Osgood R M, Ding H and Wang S 2015 Phys. Rev. B 92 115150 doi: 10.1103/PhysRevB.92.115150
[89]	Salehi M, Shapourian H, Koirala N, Brahlek M J, Moon J and Oh S 2016 Nano Lett. 16 5528 doi: 10.1021/acs.nanolett.6b02044
[90]	Wu L, Brahlek M, Aguilar R V, Stier A V, Morris C M, Lubashevsky Y, Bilbro L S, Bansal N, Oh S and Armitage N P 2013 Nat. Phys. 9 410 doi: 10.1038/nphys2647
[91]	Sim S, Koirala N, Brahlek M, Ji H S, Park J, Cha S, Jo M H, Oh S and Choi H 2015 Phys. Rev. B 91 235438 doi: 10.1103/PhysRevB.91.235438
[92]	Linder J, Yokoyama T and Sudbo A 2009 Phys. Rev. B 80 205401 doi: 10.1103/PhysRevB.80.205401
[93]	Zhang M, Wang H, Mu K, Wang P, Niu W, Zhang S, Xiao G, Chen Y, Tong T, Fu D, Wang X, Zhang H, Song F, Miao F, Sun Z, Xia Z, Wang X, Xu Y, Wang B, Xing D and Zhang R 2018 ACS Nano 12 1537 doi: 10.1021/acsnano.7b08054
[94]	Yang J, Zhang X and Miao R D 2014 Acta Phys. Sin. 63 217202 (in Chinese)
[95]	Fan Y, Upadhyaya P, Kou X, Lang M, Takei S, Wang Z, Tang J, He L, Chang L T, Montazeri M, Yu G, Jiang W, Nie T, Schwartz R N, Tserkovnyak Y and Wang K 2014 Nat. Mater. 13 699 doi: 10.1038/nmat3973
[96]	Fan Y, Kou X, Upadhyaya P, Shao Q, Pan L, Lang M, Che X, Tang J, Montazeri M, Murata K, Chang L T, Akyol M, Yu G, Nie T, Wong K, Lou J, Wang Y, Tserkovnyak Y and Wang K 2016 Nat. Nanotech. 11 352 doi: 10.1038/nnano.2015.294
[97]	Mellnik A R, Lee J S, Richardella A, Grab J L, Mintun P J, Fischer M H, Vaezi A, Manchon A, Kim E A, Samarth N and Ralph D C 2014 Nature 511 449 doi: 10.1038/nature13534
[98]	Wang Y, Deorani P, Banerjee K, Koirala N, Brahlek M, Oh S and Yang H 2015 Phys. Rev. Lett. 114 257202 doi: 10.1103/PhysRevLett.114.257202
[99]	Shiomi Y, Nomura K, Kajiwara Y, Eto K, Novak M, Segawa K, Ando Y and Saitoh E 2014 Phys. Rev. Lett. 113 196601 doi: 10.1103/PhysRevLett.113.196601
[100]	Deorani P, Son J, Banerjee K, Koirala N, Brahlek M, Oh S and Yang H 2014 Phys. Rev. B 90 094403 doi: 10.1103/PhysRevB.90.094403
[101]	Jamali M, Lee J S, Jeong J S, Mahfouzi F, Lv Y, Zhao Z, Nikolić B K, Mkhoyan K A, Samarth N and Wang J P 2015 Nano Lett. 15 7126 doi: 10.1021/acs.nanolett.5b03274
[102]	Baker A A, Figueroa A I, Collinsmcintyre L J, Laan G V D and Hesjedal T 2015 Sci. Rep. 5 7907 doi: 10.1038/srep07907

Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures

Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 102

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Tao Lin(蔺涛), Chengxiang Wang(王承祥), Zhiyong Qiu(邱志勇), Chao Chen(陈超), Tao Xing(邢弢), Lu Sun(孙璐), Jianhui Liang(梁建辉), Yizheng Wu(吴义政), Zhong Shi(时钟), and Na Lei(雷娜). Magnetic triangular bubble lattices in bismuth-doped yttrium iron garnet[J]. 中国物理B, 2023, 32(2): 27505-027505.
[2]	Junjie Wang(王俊杰), Fude Li(李福德), and Xuexi Yi(衣学喜). Hall conductance of a non-Hermitian two-band system with k-dependent decay rates[J]. 中国物理B, 2023, 32(2): 20305-020305.
[3]	Zhongchong Lin(林中冲), Yuxuan Peng(彭宇轩), Baochun Wu(吴葆春), Changsheng Wang(王常生), Zhaochu Luo(罗昭初), and Jinbo Yang(杨金波). Magnetic van der Waals materials: Synthesis, structure, magnetism, and their potential applications[J]. 中国物理B, 2022, 31(8): 87506-087506.
[4]	Zhi Yang(羊志), Feng Sun(孙峰), Deng-Hui Chen(陈登辉), Zi-Qun Wang(王子群), Chuan-Kui Wang(王传奎), Zong-Liang Li(李宗良), and Shuai Qiu(邱帅). Current spin polarization of a platform molecule with compression effect[J]. 中国物理B, 2022, 31(7): 77202-077202.
[5]	Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy[J]. 中国物理B, 2022, 31(4): 48503-048503.
[6]	Pei-Sen Li(李裴森), Jun-Ping Peng(彭俊平), Yue-Guo Hu(胡悦国), Yan-Rui Guo(郭颜瑞), Wei-Cheng Qiu(邱伟成), Rui-Nan Wu(吴瑞楠), Meng-Chun Pan(潘孟春), Jia-Fei Hu(胡佳飞), Di-Xiang Chen(陈棣湘), and Qi Zhang(张琦). Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions[J]. 中国物理B, 2022, 31(3): 38502-038502.
[7]	Shan Qiu(邱珊), Jia-Hao Liu(刘嘉豪), Ya-Bo Chen(陈亚博), Yun-Ping Zhao(赵云平), Bo Wei(危波), and Liang Fang(方粮). Skyrmion transport driven by pure voltage generated strain gradient[J]. 中国物理B, 2022, 31(11): 117701-117701.
[8]	侯延辉, 张腾, 孙家涛, 刘立巍, 姚裕贵, 王业亮. Progress on 2D topological insulators and potential applications in electronic devices[J]. 中国物理B, 2020, 29(9): 97304-097304.
[9]	Malak Azmat Ali, G Murtaza, A Laref. Exploring ferromagnetic half-metallic nature of Cs₂NpBr₆ via spin polarized density functional theory[J]. 中国物理B, 2020, 29(6): 66102-066102.
[10]	李彦琪, 阚洪君, 苗圆圆, 杨磊, 邱帅, 张广平, 任俊峰, 王传奎, 胡贵超. Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions[J]. 中国物理B, 2020, 29(1): 17303-017303.
[11]	邱志勇, 侯达之. Spin transport in antiferromagnetic insulators[J]. 中国物理B, 2019, 28(8): 88504-088504.
[12]	贺雨晴, 蒋毅, 张田田, 黄荷, 方辰, 金钟. SymTopo:An automatic tool for calculating topological properties of nonmagnetic crystalline materials[J]. 中国物理B, 2019, 28(8): 87102-087102.
[13]	饶毅恒, 张怀武, 杨青慧, 张岱南, 金立川, 马博, 吴玉娟. Liquid phase epitaxy magnetic garnet films and their applications[J]. 中国物理B, 2018, 27(8): 86701-086701.
[14]	谷现荣, 郭立丹, 孙向南. Recent spinterfacial studies targeted to spin manipulation in molecular spintronic devices[J]. 中国物理B, 2018, 27(10): 107202-107202.
[15]	P Wadley, K W Edmonds. Spin switching in antiferromagnets using Néel-order spin-orbit torques[J]. 中国物理B, 2018, 27(10): 107201-107201.