Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

doi:10.1088/1674-1056/26/3/037307

中国物理B ›› 2017, Vol. 26 ›› Issue (3): 37307-037307.doi: 10.1088/1674-1056/26/3/037307

所属专题： TOPICAL REVIEW — 2D materials: physics and device applications

• TOPICAL REVIEW—2D materials: physics and device applications • 上一篇下一篇

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

Xuefei Li(李学飞), Xiong Xiong(熊雄), Yanqing Wu(吴燕庆)

1 Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2017-01-05 修回日期:2017-02-13 出版日期:2017-03-05 发布日期:2017-03-05
通讯作者: Yanqing Wu E-mail:yqwu@hust.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

Xuefei Li(李学飞)¹, Xiong Xiong(熊雄)², Yanqing Wu(吴燕庆)^1,2

1 Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2017-01-05 Revised:2017-02-13 Online:2017-03-05 Published:2017-03-05
Contact: Yanqing Wu E-mail:yqwu@hust.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).

摘要/Abstract

摘要：

Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for electronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stability, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.

关键词: black phosphorus, transistors, mobility, photodetector

Abstract:

Key words: black phosphorus, transistors, mobility, photodetector

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

85.30.-z (Semiconductor devices)

李学飞, 熊雄, 吴燕庆. Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices[J]. 中国物理B, 2017, 26(3): 37307-037307.

Xuefei Li(李学飞), Xiong Xiong(熊雄), Yanqing Wu(吴燕庆). Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices[J]. Chin. Phys. B, 2017, 26(3): 37307-037307.

参考文献 119

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2]	Geim A K and Grigorieva I V 2013 Nature 499 419
[3]	Novoselov K, Jiang D, Schedin F, Booth T, Khotkevich V, Morozov S and Geim A 2015 Proceedings of the National Academy of Sciences of the United States of America 102 10451
[4]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nat. Nanotechnol. 6 147
[5]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H and Zhang Y 2014 Nat. Nanotechnol. 9 372
[6]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tománek D and Ye P D 2014 ACS Nano 8 4033
[7]	Chhowalla M, Shin H S, Eda G, Li L J, Loh K P and Zhang H 2013 Nat. Chem. 5 263
[8]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Nat. Nanotechnol. 7 699
[9]	Yoon Y, Ganapathi K and Salahuddin S 2011 Nano Lett. 11 3768
[10]	Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee S K and Colombo L 2014 Nat. Nanotechnol. 9 768
[11]	Schwierz F 2010 Nat. Nanotechnol. 5 487
[12]	Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Phys. Rev. Lett. 105 136805
[13]	Liu H, Neal A T and Ye P D 2012 ACS Nano 6 8563
[14]	Zhu W, Low T, Lee Y H, Wang H, Farmer D B, Kong J, Xia F and Avouris P 2014 Nat. Commun. 5 3087
[15]	Li X, Yang L, Si M, Li S, Huang M, Ye P and Wu Y 2015 Adv. Mater. 27 1547
[16]	Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J and Palacios T 2012 Nano Lett. 12 4674
[17]	Cheng R, Jiang S, Chen Y, Liu Y, Weiss N, Cheng H C, Wu H, Huang Y and Duan X 2014 Nat. Commun. 5 5143
[18]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A and Kis A 2013 Nat. Nanotechnol. 8 497
[19]	Xia F, Wang H, Xiao D, Dubey M and Ramasubramaniam A 2014 Nat. Photon. 8 899
[20]	Kaasbjerg K, Thygesen K S and Jacobsen K W 2012 Phys. Rev. B 85 115317
[21]	Jariwala D, Sangwan V K, Lauhon L J, Marks T J and Hersam M C 2014 ACS Nano 8 1102
[22]	Du Y, Yang L, Liu H and Peide D Y 2014 APL Mater. 2 092510
[23]	Morita A 1986 Appl. Phys. A 39 227
[24]	Xia F, Wang H and Jia Y 2014 Nat. Commun. 5 4458
[25]	Ling X, Wang H, Huang S, Xia F and Dresselhaus M S 2015 Proceedings of the National Academy of Sciences 112 4523
[26]	Wang X, Jones A M, Seyler K L, Tran V, Jia Y, Zhao H, Wang H, Yang L, Xu X and Xia F 2015 Nat. Nanotechnol. 10 517
[27]	Tran V, Soklaski R, Liang Y and Yang L 2014 Phys. Rev. B 89 235319
[28]	Qiao J, Kong X, Hu Z X, Yang F and Ji W 2014 Nat. Commun. 5 4475
[29]	Yau S L, Moffat T P, Bard A J, Zhang Z and Lerner M M 1992 Chem. Phys. Lett. 198 383
[30]	He J, He D, Wang Y, Cui Q, Bellus M Z, Chiu H Y and Zhao H 2015 ACS Nano 9 6436
[31]	Mao N, Tang J, Xie L, Wu J, Han B, Lin J, Deng S, Ji W, Xu H and Liu K 2015 J. Am. Chem. Soc. 138 300
[32]	Fei R and Yang L 2014 Nano Lett. 14 2884
[33]	Carvalho A, Wang M, Zhu X, Rodin A S, Su H and Castro Neto A H 2016 Nat. Rev. Mater. 1 16061
[34]	Yang J, Xu R, Pei J, Myint Y W, Wang F, Wang Z, Zhang S, Yu Z and Lu Y 2015 Light: Science & Applications 4 e312
[35]	Wang X, Jones A M, Seyler K L, Tran V, Jia Y, Zhao H, Wang H, Yang L, Xu X and Xia F 2015 Nat. Nanotechnol. 10 517
[36]	Liu Y, Low T and Ruden P P 2016 Phys. Rev. B 93 165402
[37]	Liu H, Du Y, Deng Y and Ye P D 2015 Chem. Soc. Rev. 44 2732
[38]	Xia F, Wang H and Jia Y 2014 Nat. Commun. 5 4485
[39]	Cao X and Guo J 2015 IEEE Trans. Electron Devices 62 659
[40]	Haratipour N, Robbins M C and Koester S J 2015 IEEE Electron Dev. Lett. 36 411
[41]	Haratipour N, Namgung S, Oh S H and Koester S J 2016 ACS Nano 10 3791
[42]	Du Y, Yang L, Zhou H and Ye P D 2016 IEEE Electron Dev. Lett. 37 429
[43]	Li L, Engel M, Farmer D B, Han S j and Wong H S P 2016 ACS Nano 10 4672
[44]	Zhu W, Yogeesh M N, Yang S, Aldave S H, Kim J S, Sonde S, Tao L, Lu N and Akinwande D 2015 Nano Lett. 15 1883
[45]	Liu H, Neal A T, Si M, Du Y and Ye P D 2014 IEEE Electron Dev. Lett. 35 795
[46]	Haratipour N and Koester S J 2016 IEEE Electron Dev. Lett. 37 103
[47]	Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P and Wu Y 2016 Nanoscale 8 3572
[48]	Perello D J, Chae S H, Song S and Lee Y H 2015 Nat. Commun. 6 7809
[49]	Wang G, Bao L, Pei T, Ma R, Zhang Y Y, Sun L, Zhang G, Yang H, Li J, Gu C, Du S, Pantelides S T, Schrimpf R D and Gao H J 2016 Nano Lett. 16 6870
[50]	Xiang D, Han C, Wu J, Zhong S, Liu Y, Lin J, Zhang X A, Ping H W, Özyilmaz B, Neto A H C, Wee A T S and Chen W 2015 Nat. Commun. 6 6485
[51]	Koenig S P, Doganov R A, Seixas L, Carvalho A, Tan J Y, Watanabe K, Taniguchi T, Yakovlev N, Castro Neto A H and Özyilmaz B 2016 Nano Lett. 16 2145
[52]	Prakash A, Cai Y, Zhang G, Zhang Y W and Ang K W 2017 Small 13 1602909
[53]	Penumatcha A V, Salazar R B and Appenzeller J 2015 Nat. Commun. 6 8948
[54]	Du Y, Liu H, Deng Y and Ye P D 2014 ACS Nano 8 10035
[55]	Liu F, Shi Q, Wang J and Guo H 2015 Appl. Phys. Lett. 107 203501
[56]	Constantinescu G C and Hine N D 2016 Nano Lett. 16 2586
[57]	Kang J, Jariwala D, Ryder C R, Wells S A, Choi Y, Hwang E, Cho J H, Marks T J and Hersam M C 2016 Nano Lett. 16 2580
[58]	Penumatcha A V, Salazar R B and Appenzeller J 2015 Nat. Commun. 6 8948
[59]	Du Y, Neal A T, Zhou H and Ye P D 2016 J. Phys.: Condens. Mat. 28 263002
[60]	Allain A, Kang J, Banerjee K and Kis A 2015 Nat. Mater. 14 1195
[61]	Pan Y, Wang Y, Ye M, Quhe R, Zhong H, Song Z, Peng X, Yu D, Yang J, Shi J and Lu J 2016 Chem. Mater. 28 2100
[62]	Chanana A and Mahapatra S 2014 J. Appl. Phys. 116 204302
[63]	Gong K, Zhang L, Ji W and Guo H 2014 Phys. Rev. B 90 125441
[64]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L and Ye F 2015 Nat. Nanotechnol. 10 534
[65]	Avsar A, Vera-Marun I J, Tan J Y, Watanabe K, Taniguchi T, Castro Neto A H and Ozyilmaz B 2015 ACS Nano 9 4138
[66]	Padilha J, Fazzio A and da Silva A J 2015 Phys. Rev. Lett. 114 066803
[67]	Wang H, Wang X, Xia F, Wang L, Jiang H, Xia Q, Chin M L, Dubey M and Han S J 2014 Nano Lett. 14 6424
[68]	Zhu W, Park S, Yogeesh M N, McNicholas K M, Bank S R and Akinwande D 2016 Nano Lett. 16 2301
[69]	Chowdhury S F, Yogeesh M N, Banerjee S K and Akinwande D 2016 IEEE Electron Dev. Lett. 37 449
[70]	Miao J, Zhang S, Cai L, Scherr M and Wang C 2015 ACS Nano 9 9236
[71]	Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P and Shepard K 2010 Nat. Nanotechnol. 5 722
[72]	Li X, Lu X, Li T, Yang W, Fang J, Zhang G and Wu Y 2015 ACS Nano 9 11382
[73]	Li L, Ye G J, Tran V, Fei R, Chen G, Wang H, Wang J, Watanabe K, Taniguchi T and Yang L 2015 Nat. Nanotechnol. 10 608
[74]	Chen X, Wu Y, Wu Z, Han Y, Xu S, Wang L, Ye W, Han T, He Y and Cai Y 2015 Nat. Commun. 6 7315
[75]	Chen P, Xiang J, Yu H, Xie G, Wu S, Lu X, Wang G, Zhao J, Wen F and Liu Z 2015 2D Materials 2 034009
[76]	Tayari V, Hemsworth N, Fakih I, Favron A, Gaufres E, Gervais G, Martel R and Szkopek T 2015 Nat. Commun. 6 7702
[77]	Kim J, Baik S S, Ryu S H, Sohn Y, Park S, Park B G, Denlinger J, Yi Y, Choi H J and Kim K S 2015 Science 349 723
[78]	Island J O, Steele G A, van der Zant H S and Castellanos-Gomez A 2015 2D Materials 2 011002
[79]	Boukhvalov D W, Rudenko A N, Prishchenko D A, Mazurenko V G and Katsnelson M I 2015 PCCP 17 15209
[80]	Luo X, Rahbarihagh Y, Hwang J C M, Liu H, Du Y and Ye P D 2014 IEEE Electron Dev. Lett. 35 1314
[81]	Castellanos-Gomez A, Vicarelli L, Prada E, Island J O, Narasimha-Acharya K, Blanter S I, Groenendijk D J, Buscema M, Steele G A and Alvarez J 2014 2D Materials 1 025001
[82]	Gao J, Zhang G and Zhang Y W 2016 J. Am. Chem. Soc. 138 4763
[83]	Wood J D, Wells S A, Jariwala D, Chen K S, Cho E, Sangwan V K, Liu X, Lauhon L J, Marks T J and Hersam M C 2014 Nano Lett. 14 6964
[84]	Kim J S, Liu Y, Zhu W, Kim S, Wu D, Tao L, Dodabalapur A, Lai K and Akinwande D 2015 Sci. Rep. 5 8989
[85]	Favron A, Gaufrés E, Fossard F, Phaneuf-L'Heureux A L, Tang N Y, Lévesque P L, Loiseau A, Leonelli R, Francoeur S and Martel R 2015 Nat. Mater. 14 826
[86]	Avsar A, Vera-Marun I J, Tan J Y, Watanabe K, Taniguchi T, Castro Neto A H and Özyilmaz B 2015 ACS Nano 9 4138
[87]	Engel M, Steiner M and Avouris P 2014 Nano Lett. 14 6414
[88]	Doganov R A, O'Farrell E C T, Koenig S P, Yeo Y, Ziletti A, Carvalho A, Campbell D K, Coker D F, Watanabe K, Taniguchi T, Neto A H C and Ozyilmaz B 2015 Nat. Commun. 6 6647
[89]	Ryder C R, Wood J D, Wells S A, Yang Y, Jariwala D, Marks T J, Schatz G C and Hersam M C 2016 Nat. Chem. 8 597
[90]	Ziletti A, Carvalho A, Campbell D K, Coker D F and Castro Neto A H 2015 Phys. Rev. Lett. 114 046801
[91]	Wang V, Kawazoe Y and Geng W 2015 Phys. Rev. B 91 045433
[92]	Utt K L, Rivero P, Mehboudi M, Harriss E O, Borunda M F, Pacheco SanJuan A A and Barraza-Lopez S 2015 ACS Central Science 1 320
[93]	Koppens F H L, Mueller T, Avouris P, Ferrari A C, Vitiello M S and Polini M 2014 Nat. Nanotechol. 9 780
[94]	Xia F, Wang H, Xiao D, Dubey M and Ramasubramaniam A 2014 Nat. Photon. 8 899
[95]	Mak K F and Shan J 2016 Nat. Photon. 10 216
[96]	Xia F, Mueller T, Lin Y m, Valdes-Garcia A and Avouris P 2009 Nat. Nanotechnol. 4 839
[97]	Tielrooij K J, Piatkowski L, Massicotte M, Woessner A, Ma Q, Lee Y, Myhro K S, Lau C N, Jarillo Herrero P, van Hulst N F and Koppens F H L 2015 Nat. Nanotechnol. 10 437
[98]	Yin Z, Li H, Li H, Jiang L, Shi Y, Sun Y, Lu G, Zhang Q, Chen X and Zhang H 2012 ACS Nano 6 74
[99]	Konstantatos G and Sargent E H 2010 Nat. Nanotechnol. 5 391
[100]	Rogalski A, Antoszewski J and Faraone L 2009 J. Appl. Phys. 105 091101
[101]	Buscema M, Island J O, Groenendijk D J, Blanter S I, Steele G A, van der Zant H S J and Castellanos-Gomez A 2015 Chem. Soc. Rev. 44 3691
[102]	Li J, Niu L, Zheng Z and Yan F 2014 Adv. Mater. 26 5239
[103]	Buscema M, Groenendijk D J, Blanter S I, Steele G A, van der Zant H S and Castellanos-Gomez A 2014 Nano Lett. 14 3347
[104]	Wu J, Koon G K W, Xiang D, Han C, Toh C T, Kulkarni E S, Verzhbitskiy I, Carvalho A, Rodin A S, Koenig S P, Eda G, Chen W, Neto A H C and Özyilmaz B 2015 ACS Nano 9 8070
[105]	Huang M, Wang M, Chen C, Ma Z, Li X, Han J and Wu Y 2016 Adv. Mater. 28 3481
[106]	Viti L, Hu J, Coquillat D, Knap W, Tredicucci A, Politano A, Vitiello M S 2015 Adv. Mater. 27 5567
[107]	Guo Q, Pospischil A, Bhuiyan M, Jiang H, Tian H, Farmer D, Deng B, Li C, Han S J, Wang H, Xia Q, Ma T P, Mueller T and Xia F 2016 Nano Lett. 16 4648
[108]	Wenjing Z, Qixing W, Yu C, Zhuo W and Andrew T S W 2016 2D Materials 3 022001
[109]	Tian H, Chin M L, Najmaei S, Guo Q, Xia F, Wang H and Dubey M 2016 Nano Research 9 1543
[110]	Deng Y, Luo Z, Conrad N J, Liu H, Gong Y, Najmaei S, Ajayan P M, Lou J, Xu X and Ye P D 2014 ACS Nano 8 8292
[111]	Ye L, Li H, Chen Z and Xu J 2016 ACS Photonics 3 692
[112]	Chen P, Zhang T T, Zhang J, Xiang J, Yu H, Wu S, Lu X, Wang G, Wen F, Liu Z, Yang R, Shi D and Zhang G 2016 Nanoscale 8 3254
[113]	Buscema M, Groenendijk D J, Steele G A, van der Zant H S J and Castellanos-Gomez A 2014 Nat. Commun. 5 4651
[114]	Youngblood N, Chen C, Koester S J and Li M 2015 Nat. Photon. 9 247
[115]	Wang Z, Jia H, Zheng X Q, Yang R, Ye G, Chen X and Feng P X L 2016 Nano Lett. 16 5394
[116]	Cai Y, Ke Q, Zhang G, Feng Y P, Shenoy V B and Zhang Y W 2015 Adv. Funct. Mater. 25 2230
[117]	Hong T, Chamlagain B, Lin W, Chuang H J, Pan M, Zhou Z and Xu Y Q 2014 Nanoscale 6 8978
[118]	Hong T, Chamlagain B, Wang T, Chuang H J, Zhou Z and Xu Y Q 2015 Nanoscale 7 18537
[119]	Li P and Appelbaum I 2014 Phys. Rev. B 90 115439

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

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