中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47302-047302.doi: 10.1088/1674-1056/27/4/047302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Gap plasmon-enhanced photoluminescence of monolayer MoS2 in hybrid nanostructure

Le Yu(余乐), Di Liu(刘頔), Xiao-Zhuo Qi(祁晓卓), Xiao Xiong(熊霄), Lan-Tian Feng(冯兰天), Ming Li(李明), Guo-Ping Guo(郭国平), Guang-Can Guo(郭光灿), Xi-Feng Ren(任希锋)   

  1. 1. Key Laboratory of Quantum Information, Chinese Academy of Sciences, University of Science and Technology of China, Hefei 230026, China;
    2. Synergetic Innovation Center of Quantum Information & Quantum Physics
  • 收稿日期:2018-02-02 修回日期:2018-02-14 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Xi-Feng Ren E-mail:renxf@ustc.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61590932 and 11774333), the Anhui Initiative Project in Quantum Information Technologies, China (Grant No. AHY130300), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB24030600), the National Key Research and Development Program of China (Grant No. 2016YFA0301700), and the Fundamental Research Funds for the Central Universities, China.

Gap plasmon-enhanced photoluminescence of monolayer MoS2 in hybrid nanostructure

Le Yu(余乐)1,2, Di Liu(刘頔)1,2, Xiao-Zhuo Qi(祁晓卓)1,2, Xiao Xiong(熊霄)1,2, Lan-Tian Feng(冯兰天)1,2, Ming Li(李明)1,2, Guo-Ping Guo(郭国平)1,2, Guang-Can Guo(郭光灿)1,2, Xi-Feng Ren(任希锋)1,2   

  1. 1. Key Laboratory of Quantum Information, Chinese Academy of Sciences, University of Science and Technology of China, Hefei 230026, China;
    2. Synergetic Innovation Center of Quantum Information & Quantum Physics
  • Received:2018-02-02 Revised:2018-02-14 Online:2018-04-05 Published:2018-04-05
  • Contact: Xi-Feng Ren E-mail:renxf@ustc.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61590932 and 11774333), the Anhui Initiative Project in Quantum Information Technologies, China (Grant No. AHY130300), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB24030600), the National Key Research and Development Program of China (Grant No. 2016YFA0301700), and the Fundamental Research Funds for the Central Universities, China.

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摘要：

Monolayer transition-metal dichalcogenides (TMDs) have attracted a lot of attention for their applications in optics and optoelectronics. Molybdenum disulfide (MoS2), as one of those important materials, has been widely investigated due to its direct band gap and photoluminescence (PL) in visible range. Owing to the fact that the monolayer MoS2 suffers low light absorption and emission, surface plasmon polaritons (SPPs) are used to enhance both the excitation and emission efficiencies. Here, we demonstrate that the PL of MoS2 sandwiched between 200-nm-diameter gold nanoparticle (AuNP) and 150-nm-thick gold film is improved by more than 4 times compared with bare MoS2 sample. This study shows that gap plasmons can possess more optical and optoelectronic applications incorporating with many other emerging two-dimensional materials.

关键词: MoS2, surface plasmon polaritons, gap plasmons

Abstract:

Monolayer transition-metal dichalcogenides (TMDs) have attracted a lot of attention for their applications in optics and optoelectronics. Molybdenum disulfide (MoS2), as one of those important materials, has been widely investigated due to its direct band gap and photoluminescence (PL) in visible range. Owing to the fact that the monolayer MoS2 suffers low light absorption and emission, surface plasmon polaritons (SPPs) are used to enhance both the excitation and emission efficiencies. Here, we demonstrate that the PL of MoS2 sandwiched between 200-nm-diameter gold nanoparticle (AuNP) and 150-nm-thick gold film is improved by more than 4 times compared with bare MoS2 sample. This study shows that gap plasmons can possess more optical and optoelectronic applications incorporating with many other emerging two-dimensional materials.

Key words: MoS2, surface plasmon polaritons, gap plasmons

中图分类号:  (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))

  • 73.20.Mf
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))