Physical manipulation of ultrathin-film optical interference for super absorption and two-dimensional heterojunction photoconversion

doi:10.1088/1674-1056/27/12/124202

中国物理B ›› 2018, Vol. 27 ›› Issue (12): 124202-124202.doi: 10.1088/1674-1056/27/12/124202

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Photodetector: materials, physics, and applications • 上一篇下一篇

Physical manipulation of ultrathin-film optical interference for super absorption and two-dimensional heterojunction photoconversion

Guo-Yang Cao(曹国洋), Cheng Zhang(张程), Shao-Long Wu(吴绍龙), Dong Ma(马冬), Xiao-Feng Li(李孝峰)

1 School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University, Suzhou 215006, China;
2 Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of the Education Ministry of China, Soochow University, Suzhou 215006, China;
3 School of Rail Transportation, Soochow University, Suzhou 215131, China

收稿日期:2018-04-13 修回日期:2018-09-12 出版日期:2018-12-05 发布日期:2018-12-05
通讯作者: Dong Ma, Xiao-Feng Li E-mail:madong@suda.edu.cn;xfli@suda.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61675142 and 61875143), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20140359), the Natural Science Research Project of the Higher Educational Institutions of Jiangsu Province, China (Grant No. 17KJA480004), the Postgraduate Research & Practice Innovation Program of Jiangsu Province, China (Grant No. KYCX17_2027), and the Priority Academic Program Development of the Higher Educational Institutions of Jiangsu Province, China.

Physical manipulation of ultrathin-film optical interference for super absorption and two-dimensional heterojunction photoconversion

Guo-Yang Cao(曹国洋)^1,2, Cheng Zhang(张程)^1,2, Shao-Long Wu(吴绍龙)^1,2, Dong Ma(马冬)³, Xiao-Feng Li(李孝峰)^1,2

1 School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University, Suzhou 215006, China;
2 Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of the Education Ministry of China, Soochow University, Suzhou 215006, China;
3 School of Rail Transportation, Soochow University, Suzhou 215131, China

Received:2018-04-13 Revised:2018-09-12 Online:2018-12-05 Published:2018-12-05
Contact: Dong Ma, Xiao-Feng Li E-mail:madong@suda.edu.cn;xfli@suda.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61675142 and 61875143), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20140359), the Natural Science Research Project of the Higher Educational Institutions of Jiangsu Province, China (Grant No. 17KJA480004), the Postgraduate Research & Practice Innovation Program of Jiangsu Province, China (Grant No. KYCX17_2027), and the Priority Academic Program Development of the Higher Educational Institutions of Jiangsu Province, China.

摘要/Abstract

摘要：

Ultrathin optical interference in a system composed of absorbing material and metal reflector has attracted extensive attention due to its potential application in realizing highly efficient optical absorption by using extremely thin semiconductor material. In this paper, we study the physics behind the high absorption of ultrathin film from the viewpoint of destructive interference and admittance matching, particularly addressing the phase evolution by light propagation and interface reflection. The physical manipulations of the ultrathin interference effect by controlling the substrate material and semiconductor material/thickness are examined. We introduce typical two-dimensional materials–i.e., MoS₂ and WSe₂–as the absorbing layer with thickness below 10 nm, which exhibits~90% absorption in a large range of incident angle (0°~70°). According to the ultrathin interference mechanism, we propose the ultrathin (<20 nm) MoS₂/WSe₂ heterojunction for photovoltaic application and carefully examine the detailed optoelectronic responses by coupled multiphysics simulation. By comparing the same cells on SiO₂ substrate, both the short-circuit current density (up to 20 mA/cm²) and the photoelectric conversion efficiency (up to 9.5%) are found to be increased by~200%.

关键词: photovoltaic, subwavelength structures, interference coating

Abstract:

Key words: photovoltaic, subwavelength structures, interference coating

中图分类号: (Interference)

42.25.Hz

78.66.-w (Optical properties of specific thin films) 88.40.H- (Solar cells (photovoltaics))

曹国洋, 张程, 吴绍龙, 马冬, 李孝峰. Physical manipulation of ultrathin-film optical interference for super absorption and two-dimensional heterojunction photoconversion[J]. 中国物理B, 2018, 27(12): 124202-124202.

Guo-Yang Cao(曹国洋), Cheng Zhang(张程), Shao-Long Wu(吴绍龙), Dong Ma(马冬), Xiao-Feng Li(李孝峰). Physical manipulation of ultrathin-film optical interference for super absorption and two-dimensional heterojunction photoconversion[J]. Chin. Phys. B, 2018, 27(12): 124202-124202.

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Physical manipulation of ultrathin-film optical interference for super absorption and two-dimensional heterojunction photoconversion

Physical manipulation of ultrathin-film optical interference for super absorption and two-dimensional heterojunction photoconversion

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