中国物理B ›› 2018, Vol. 27 ›› Issue (1): 18809-018809.doi: 10.1088/1674-1056/27/1/018809

所属专题： SPECIAL TOPIC — New generation solar cells

• SPECIAL TOPIC—Non-equilibrium phenomena in soft matters • 上一篇    下一篇

Precisely tuning Ge substitution for efficient solution-processed Cu2ZnSn(S, Se)4 solar cells

Xinshou Wang(王新收), Dongxing Kou(寇东星), Wenhui Zhou(周文辉), Zhengji Zhou(周正基), Qingwen Tian(田庆文), Yuena Meng(孟月娜), Sixin Wu(武四新)   

  1. The Key Laboratory for Special Functional Materials of MOE, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
  • 收稿日期:2017-09-28 修回日期:2017-11-17 出版日期:2018-01-05 发布日期:2018-01-05
  • 通讯作者: Dongxing Kou, Sixin Wu E-mail:koudongxing@henu.edu.cn;wusixin@henu.edu.cn
  • 基金资助:
    Project supported by the Joint Talent Cultivation Funds of NSFC-HN (Grant No. U1604138), the National Natural Science Foundation of China (Grant Nos. 21603058 and 51702085), the Innovation Research Team of Science and Technology in Henan Province, China (Grant No. 17IRTSTHN028), the Science and Technology Innovation Talents in Universities of Henan Province, China (Grant No. 18HASTIT016), and the Young Key Teacher Foundation of Universities of Henan Province, China (Grant No. 2015GGJS-022).

Precisely tuning Ge substitution for efficient solution-processed Cu2ZnSn(S, Se)4 solar cells

Xinshou Wang(王新收), Dongxing Kou(寇东星), Wenhui Zhou(周文辉), Zhengji Zhou(周正基), Qingwen Tian(田庆文), Yuena Meng(孟月娜), Sixin Wu(武四新)   

  1. The Key Laboratory for Special Functional Materials of MOE, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
  • Received:2017-09-28 Revised:2017-11-17 Online:2018-01-05 Published:2018-01-05
  • Contact: Dongxing Kou, Sixin Wu E-mail:koudongxing@henu.edu.cn;wusixin@henu.edu.cn
  • Supported by:
    Project supported by the Joint Talent Cultivation Funds of NSFC-HN (Grant No. U1604138), the National Natural Science Foundation of China (Grant Nos. 21603058 and 51702085), the Innovation Research Team of Science and Technology in Henan Province, China (Grant No. 17IRTSTHN028), the Science and Technology Innovation Talents in Universities of Henan Province, China (Grant No. 18HASTIT016), and the Young Key Teacher Foundation of Universities of Henan Province, China (Grant No. 2015GGJS-022).

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摘要： The kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have yielded a prospective conversion efficiency among all thin-film photovoltaic technology. However, its further development is still hindered by the lower open-circuit voltage (Voc), and the non-ideal bandgap of the absorber is an important factor affecting this issue. The substitution of Sn with Ge provides a unique ability to engineer the bandgap of the absorber film. Herein, a simple precursor solution approach was successfully developed to fabricate Cu2Zn(SnyGe1-y)(SxSe1-x)4 (CZTGSSe) solar cells. By precisely adjusting the Ge content in a small range, the Voc and Jsc are enhanced simultaneously. Benefitting from the optimized bandgap and the maintained spike structure and light absorption, the 10% Ge/(Ge+Sn) content device with a bandgap of approximately 1.1 eV yields the highest efficiency of 9.36%. This further indicates that a precisely controlled Ge content could further improve the cell performance for efficient CZTGSSe solar cells.

关键词: Cu2ZnSn (S, Se)4, solar cells, Ge substitution, bandgap

Abstract: The kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have yielded a prospective conversion efficiency among all thin-film photovoltaic technology. However, its further development is still hindered by the lower open-circuit voltage (Voc), and the non-ideal bandgap of the absorber is an important factor affecting this issue. The substitution of Sn with Ge provides a unique ability to engineer the bandgap of the absorber film. Herein, a simple precursor solution approach was successfully developed to fabricate Cu2Zn(SnyGe1-y)(SxSe1-x)4 (CZTGSSe) solar cells. By precisely adjusting the Ge content in a small range, the Voc and Jsc are enhanced simultaneously. Benefitting from the optimized bandgap and the maintained spike structure and light absorption, the 10% Ge/(Ge+Sn) content device with a bandgap of approximately 1.1 eV yields the highest efficiency of 9.36%. This further indicates that a precisely controlled Ge content could further improve the cell performance for efficient CZTGSSe solar cells.

Key words: Cu2ZnSn (S, Se)4, solar cells, Ge substitution, bandgap

中图分类号:  (Performance testing)

  • 88.40.ff
88.40.hj (Efficiency and performance of solar cells) 88.40.jn (Thin film Cu-based I-III-VI2 solar cells) 85.60.Bt (Optoelectronic device characterization, design, and modeling)