中国物理B ›› 2016, Vol. 25 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/25/12/128502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

Jin Cao(曹进), Jing-Wei Xie(谢婧薇), Xiang Wei(魏翔), Jie Zhou(周洁), Chao-Ping Chen(陈超平), Zi-Xing Wang(王子兴), Chulgyu Jhun(田哲圭)   

  1. 1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;
    2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;
    3. National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
    4. School of Green Energy & Semiconductor Engineering, Hoseo University, Asan City, Chungnam, 336-795, South Korea
  • 收稿日期:2016-06-08 修回日期:2016-08-08 出版日期:2016-12-05 发布日期:2016-12-05
  • 通讯作者: Jin Cao E-mail:cj2007@shu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 21302122) and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13ZR1416600).

Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

Jin Cao(曹进)2, Jing-Wei Xie(谢婧薇)1, Xiang Wei(魏翔)2, Jie Zhou(周洁)2, Chao-Ping Chen(陈超平)3, Zi-Xing Wang(王子兴)2, Chulgyu Jhun(田哲圭)4   

  1. 1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;
    2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;
    3. National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
    4. School of Green Energy & Semiconductor Engineering, Hoseo University, Asan City, Chungnam, 336-795, South Korea
  • Received:2016-06-08 Revised:2016-08-08 Online:2016-12-05 Published:2016-12-05
  • Contact: Jin Cao E-mail:cj2007@shu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 21302122) and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13ZR1416600).

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摘要：

A bright white quantum dot light-emitting device (white-QLED) with 4-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-2-[3-(tri-phenylen-2-yl)phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2@8 V with the Commission Internationale de l'Eclairage (CIE) chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence (EL) spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED.

关键词: quantum dot light-emitting devices, white, ultra-thin film, charge injection

Abstract:

A bright white quantum dot light-emitting device (white-QLED) with 4-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-2-[3-(tri-phenylen-2-yl)phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2@8 V with the Commission Internationale de l'Eclairage (CIE) chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence (EL) spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED.

Key words: quantum dot light-emitting devices, white, ultra-thin film, charge injection

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
78.67.Hc (Quantum dots) 78.20.-e (Optical properties of bulk materials and thin films) 61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))