中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117303-117303.doi: 10.1088/1674-1056/25/11/117303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electronic transport of bilayer graphene with asymmetry line defects

Xiao-Ming Zhao(赵小明), Ya-Jie Wu(吴亚杰), Chan Chen(陈婵), Ying Liang(梁颖), Su-Peng Kou(寇谡鹏)   

  1. 1 Department of Physics, Beijing Normal University, Beijing 100875, China;
    2 School of Science, Xi'an Technological University, Xi'an 710021, China
  • 收稿日期:2016-06-20 修回日期:2016-08-10 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Su-Peng Kou E-mail:spkou@bnu.edu.cn
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921803 and 2012CB921704), the National Natural Science Foundation of China (Grant Nos. 11174035, 11474025, 11504285, and 11404090), the Specialized Research Fund for the Doctoral Program of Higher Education, China, the Fundamental Research Funds for the Central Universities, China, the Scientific Research Program Fund of the Shaanxi Provincial Education Department, China (Grant No. 15JK1363), and the Young Talent Fund of University Association for Science and Technology in Shaanxi Province, China.

Electronic transport of bilayer graphene with asymmetry line defects

Xiao-Ming Zhao(赵小明)1, Ya-Jie Wu(吴亚杰)2, Chan Chen(陈婵)1, Ying Liang(梁颖)1, Su-Peng Kou(寇谡鹏)1   

  1. 1 Department of Physics, Beijing Normal University, Beijing 100875, China;
    2 School of Science, Xi'an Technological University, Xi'an 710021, China
  • Received:2016-06-20 Revised:2016-08-10 Online:2016-11-05 Published:2016-11-05
  • Contact: Su-Peng Kou E-mail:spkou@bnu.edu.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921803 and 2012CB921704), the National Natural Science Foundation of China (Grant Nos. 11174035, 11474025, 11504285, and 11404090), the Specialized Research Fund for the Doctoral Program of Higher Education, China, the Fundamental Research Funds for the Central Universities, China, the Scientific Research Program Fund of the Shaanxi Provincial Education Department, China (Grant No. 15JK1363), and the Young Talent Fund of University Association for Science and Technology in Shaanxi Province, China.

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摘要：

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering.

关键词: bilayer graphene, defects, transportation

Abstract:

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering.

Key words: bilayer graphene, defects, transportation

中图分类号:  (Electronic structure of graphene)

  • 73.22.Pr
73.20.Hb (Impurity and defect levels; energy states of adsorbed species) 71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))