中国物理B ›› 2016, Vol. 25 ›› Issue (10): 108101-108101.doi: 10.1088/1674-1056/25/10/108101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

Li-Fan Wu(武利翻), Yu-Ming Zhang(张玉明), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门)   

  1. 1 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China;
    2 School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
  • 收稿日期:2015-09-28 修回日期:2016-06-15 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Hong-Liang Lv E-mail:hllv@mail.xidian.edu.cn
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

Li-Fan Wu(武利翻)1,2, Yu-Ming Zhang(张玉明)1, Hong-Liang Lv(吕红亮)1, Yi-Men Zhang(张义门)1   

  1. 1 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China;
    2 School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
  • Received:2015-09-28 Revised:2016-06-15 Online:2016-10-05 Published:2016-10-05
  • Contact: Hong-Liang Lv E-mail:hllv@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

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摘要： Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37×10-6 A/cm2 and 3.22×10-6A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Qot) value and the interface state density (Dit).

关键词: high-k dielectric, atomic layer deposition, InAlAs, characteristics

Abstract: Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37×10-6 A/cm2 and 3.22×10-6A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Qot) value and the interface state density (Dit).

Key words: high-k dielectric, atomic layer deposition, InAlAs, characteristics

中图分类号:  (III-V semiconductors)

  • 81.05.Ea