›› 2015, Vol. 24 ›› Issue (4): 47206-047206.doi: 10.1088/1674-1056/24/4/047206

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Room-temperature terahertz detection based on CVD graphene transistor

杨昕昕a b, 孙建东a, 秦华a, 吕利a b, 苏丽娜c, 闫博d, 李欣幸a, 张志鹏a, 方靖岳d   

  1. a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    b University of Chinese Academy of Sciences, Beijing 100049, China;
    c Key Laboratory of Advanced Process Control for Light Industry, Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;
    d College of Science, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2014-03-25 修回日期:2014-10-23 出版日期:2015-04-05 发布日期:2015-04-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61271157, 61401456, and 11403084), Jiangsu Provincial Planned Projects for Postdoctoral Research Funds (Grant No. 1301054B), the Fund from Suzhou Industry Technology Bureau (Grant No. ZXG2012024), China Postdoctoral Science Foundation (Grant No. 2014M551678), the Graduate Student Innovation Program for Universities of Jiangsu Province (Grant No. CXLX12_0724), the Fundamental Research Funds for the Central Universities (Grant No. JUDCF 12032), and the Fund from National University of Defense Technology (Grant No. JC13-02-14).

Room-temperature terahertz detection based on CVD graphene transistor

Yang Xin-Xin (杨昕昕)a b, Sun Jian-Dong (孙建东)a, Qin Hua (秦华)a, Lv Li (吕利)a b, Su Li-Na (苏丽娜)c, Yan Bo (闫博)d, Li Xin-Xing (李欣幸)a, Zhang Zhi-Peng (张志鹏)a, Fang Jing-Yue (方靖岳)d   

  1. a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    b University of Chinese Academy of Sciences, Beijing 100049, China;
    c Key Laboratory of Advanced Process Control for Light Industry, Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;
    d College of Science, National University of Defense Technology, Changsha 410073, China
  • Received:2014-03-25 Revised:2014-10-23 Online:2015-04-05 Published:2015-04-05
  • Contact: Qin Hua E-mail:hqin2007@sinano.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61271157, 61401456, and 11403084), Jiangsu Provincial Planned Projects for Postdoctoral Research Funds (Grant No. 1301054B), the Fund from Suzhou Industry Technology Bureau (Grant No. ZXG2012024), China Postdoctoral Science Foundation (Grant No. 2014M551678), the Graduate Student Innovation Program for Universities of Jiangsu Province (Grant No. CXLX12_0724), the Fundamental Research Funds for the Central Universities (Grant No. JUDCF 12032), and the Fund from National University of Defense Technology (Grant No. JC13-02-14).

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摘要： We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.

关键词: graphene, field effect transistor, self-mixing, terahertz detection

Abstract: We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.

Key words: graphene, field effect transistor, self-mixing, terahertz detection

中图分类号:  (Electronic transport in graphene)

  • 72.80.Vp
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices) 07.57.Kp (Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors)