›› 2015, Vol. 24 ›› Issue (3): 38501-038501.doi: 10.1088/1674-1056/24/3/038501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

A novel integrated ultraviolet photodetector based on standard CMOS process

汪涵a b, 金湘亮a b, 陈长平a b, 田满芳a b, 朱柯翰c   

  1. a Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan 411105, China;
    b Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip, Xiangtan 411105, China;
    c Electrical and Computer Engineering Department, Boise State University, Boise 83725 (208), USA
  • 收稿日期:2014-08-10 修回日期:2014-10-13 出版日期:2015-03-05 发布日期:2015-03-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61274043), the Key Project of the Ministry of Education of China (Grant No. 212125), and the State Key Program of the National Natural Science Foundation of China (Grant No. 61233010).

A novel integrated ultraviolet photodetector based on standard CMOS process

Wang Han (汪涵)a b, Jin Xiang-Liang (金湘亮)a b, Chen Chang-Ping (陈长平)a b, Tian Man-Fang (田满芳)a b, Zhu Ke-Han (朱柯翰)c   

  1. a Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan 411105, China;
    b Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip, Xiangtan 411105, China;
    c Electrical and Computer Engineering Department, Boise State University, Boise 83725 (208), USA
  • Received:2014-08-10 Revised:2014-10-13 Online:2015-03-05 Published:2015-03-05
  • Contact: Jin Xiang-Liang E-mail:jinxl@xtu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61274043), the Key Project of the Ministry of Education of China (Grant No. 212125), and the State Key Program of the National Natural Science Foundation of China (Grant No. 61233010).

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摘要： A novel integrated ultraviolet (UV) photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared (IR) photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV-IR photodetector has a maximum spectral responsivity of 0.27 A · W-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000, which is much higher than that of the single UV photodiode.

关键词: ultraviolet photodetector, compensating parasitic photocurrent, UV selectivity, CMOS process

Abstract: A novel integrated ultraviolet (UV) photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared (IR) photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV-IR photodetector has a maximum spectral responsivity of 0.27 A · W-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000, which is much higher than that of the single UV photodiode.

Key words: ultraviolet photodetector, compensating parasitic photocurrent, UV selectivity, CMOS process

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 85.30.-z (Semiconductor devices)