›› 2015, Vol. 24 ›› Issue (3): 38101-038101.doi: 10.1088/1674-1056/24/3/038101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effects of FeNi-phosphorus-carbon system on crystal growth of diamond under high pressure and high temperature conditions

胡美华a, 毕宁b, 李尚升a, 宿太超a, 周爱国a, 胡强a, 贾晓鹏c, 马红安c   

  1. a School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
    b School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000, China;
    c State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • 收稿日期:2014-07-06 修回日期:2014-09-28 出版日期:2015-03-05 发布日期:2015-03-05
  • 基金资助:
    Project supported by the Doctoral Fund of Henan Polytechnic University, China (Grant Nos. B2013-013 and B2013-044) and the Research Projects of Science and Technology of the Education Department of Henan Province, China (Grant Nos. 14B430026 and 12A430010).

Effects of FeNi-phosphorus-carbon system on crystal growth of diamond under high pressure and high temperature conditions

Hu Mei-Hua (胡美华)a, Bi Ning (毕宁)b, Li Shang-Sheng (李尚升)a, Su Tai-Chao (宿太超)a, Zhou Ai-Guo (周爱国)a, Hu Qiang (胡强)a, Jia Xiao-Peng (贾晓鹏)c, Ma Hong-An (马红安)c   

  1. a School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
    b School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000, China;
    c State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • Received:2014-07-06 Revised:2014-09-28 Online:2015-03-05 Published:2015-03-05
  • Contact: Hu Mei-Hua E-mail:humh@hpu.edu.cn
  • Supported by:
    Project supported by the Doctoral Fund of Henan Polytechnic University, China (Grant Nos. B2013-013 and B2013-044) and the Research Projects of Science and Technology of the Education Department of Henan Province, China (Grant Nos. 14B430026 and 12A430010).

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摘要： This paper reports the crystal growth of diamond from the FeNi-Carbon system with additive phosphorus at high pressures and high temperatures of 5.4-5.8 GPa and 1280-1360℃. Attributed to the presence of additive phosphorus, the pressure and temperature condition, morphology, and color of diamond crystals change obviously. The pressure and temperature condition of diamond growth increases evidently with the increase of additive phosphorus content and results in the moving up of the V-shape region. The surfaces of the diamonds also become coarse as the additive phosphorus added in the growth system. Raman spectra indicate that diamonds grown from the FeNi-phosphorus-carbon system have more crystal defects and impurities. This work provides a new way to enrich the doping of diamond and improve the experimental exploration for future material applications.

关键词: diamond, high pressure and high temperature, additive phosphorus

Abstract: This paper reports the crystal growth of diamond from the FeNi-Carbon system with additive phosphorus at high pressures and high temperatures of 5.4-5.8 GPa and 1280-1360℃. Attributed to the presence of additive phosphorus, the pressure and temperature condition, morphology, and color of diamond crystals change obviously. The pressure and temperature condition of diamond growth increases evidently with the increase of additive phosphorus content and results in the moving up of the V-shape region. The surfaces of the diamonds also become coarse as the additive phosphorus added in the growth system. Raman spectra indicate that diamonds grown from the FeNi-phosphorus-carbon system have more crystal defects and impurities. This work provides a new way to enrich the doping of diamond and improve the experimental exploration for future material applications.

Key words: diamond, high pressure and high temperature, additive phosphorus

中图分类号:  (Diamond)

  • 81.05.ug
81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 61.72.-y (Defects and impurities in crystals; microstructure)