Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

doi:10.1088/1674-1056/24/12/127306

中国物理B ›› 2015, Vol. 24 ›› Issue (12): 127306-127306.doi: 10.1088/1674-1056/24/12/127306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Investigation of trap states in Al₂O₃ InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

张鹏^a, 赵胜雷^b, 薛军帅^b, 祝杰杰^a, 马晓华^a, 张进成^b, 郝跃^b

a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
b Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2015-04-05 修回日期:2015-08-06 出版日期:2015-12-05 发布日期:2015-12-05
通讯作者: Zhang Peng E-mail:pengzhang@xidian.edu.cn
基金资助:
Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Investigation of trap states in Al₂O₃ InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Zhang Peng (张鹏)^a, Zhao Sheng-Lei (赵胜雷)^b, Xue Jun-Shuai (薛军帅)^b, Zhu Jie-Jie (祝杰杰)^a, Ma Xiao-Hua (马晓华)^a, Zhang Jin-Cheng (张进成)^b, Hao Yue (郝跃)^b

a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
b Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2015-04-05 Revised:2015-08-06 Online:2015-12-05 Published:2015-12-05
Contact: Zhang Peng E-mail:pengzhang@xidian.edu.cn
Supported by:
Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

摘要/Abstract

摘要： In this paper the trapping effects in Al₂O₃/In_0.17Al_0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al₂O₃/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.

关键词: InAlN, trapping, frequency-dependent conductance, metal-oxide-semiconductor high-electron-mobility transistors

Abstract: In this paper the trapping effects in Al₂O₃/In_0.17Al_0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al₂O₃/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.

Key words: InAlN, trapping, frequency-dependent conductance, metal-oxide-semiconductor high-electron-mobility transistors

中图分类号: (III-V semiconductors)

73.61.Ey

85.30.Tv (Field effect devices) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

张鹏, 赵胜雷, 薛军帅, 祝杰杰, 马晓华, 张进成, 郝跃. Investigation of trap states in Al₂O₃ InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors[J]. 中国物理B, 2015, 24(12): 127306-127306.

Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Xue Jun-Shuai (薛军帅), Zhu Jie-Jie (祝杰杰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃). Investigation of trap states in Al₂O₃ InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors[J]. Chin. Phys. B, 2015, 24(12): 127306-127306.

参考文献 16

[1]	Corrion A L, Shinohara K, Regan D, Milosavljevic I, Hashimoto P and Willadsen P J 2011 IEEE Electron Dev. Lett. 32 1062
[2]	Liu Z H, Ng G I, Zhou H, Arulkumaran S and Maung Y K T 2011 Appl. Phys. Lett. 98 113506
[3]	Yue Y Z, Hao Y, Feng Q, Zhang J C, Ma X H and Ni J Y 2007 Chin. Phys. Lett. 24 2419
[4]	Gregusova D, Stoklas R, Mizue C, Hori Y, Novak J and Hashizume T 2010 J. Appl. Phys. 107 106104
[5]	Freedsman J J, Kubo T and Egawa T 2011 Appl. Phys. Lett. 99 033504
[6]	Kordos P, Stoklas R, Gregusova D, Gazi S and Novak J 2010 Appl. Phys. Lett. 96 013505
[7]	Ma X H, Zhu J J, Liao X Y, Yue T, Chen W W and Hao Y 2013 Appl. Phys. Lett. 103 033510
[8]	Zhang K, Xue J S, Cao M, Yang L, Chen Y, Zhang J and Hao Y 2013 Appl. Phys. Lett. 113 174503
[9]	Zhu J J, Ma X H, Hou B, Chen W W and Hao Y 2013 AIP Adv. 4 037108
[10]	Zhang P, Zhao S L, Xue J S, Zhang K, Ma X H, Zhang J C, and Hao Y 2014 Chin. Phys. Lett. 31 037302
[11]	Zhao S L, Zhang K, Ha W, Chen Y H, Zhang P, Zhang J C, Ma X H and Hao Y 2013 Appl. Phys. Lett. 103 212106
[12]	Medjdoub F, Carlin J F, Gonschorek M, Feltin E, Py M A, Ducatteau D, Gaquiere C, Grandjean N and Kohn E 2006 IEDM Electron Devices Meeting, December 10-13, 2006, San Francisco, CA, USA, pp. 129-134
[13]	Xue J S, Zhang J C, Hou Y W, Zhou H, Zhang J F and Hao Y 2012 Appl. Phys. Lett. 100 013507
[14]	Dong Seup L, Xiang G, Shiping G, Kopp D, Fay P and Palacios T 2011 IEEE Electron Dev. Lett. 32 1525
[15]	Xue J S, Hao Y, Zhang, J C, Zhou X W, Liu Z Y, Ma J C and Lin Z Y 2011 Appl. Phys. Lett. 98 113504
[16]	Mishra K, Schmidt P, Laubach S and Johnson K 2007 Phys. Rev. B 76 035127

Investigation of trap states in Al₂O₃ InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Investigation of trap states in Al₂O₃ InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 16

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.
[2]	Chen Ling(凌晨), Yaling Yin(尹亚玲), Yang Liu(刘泱), Lin Li(李林), and Yong Xia(夏勇). Generation of a blue-detuned optical storage ring by a metasurface and its application in optical trapping of cold molecules[J]. 中国物理B, 2023, 32(2): 23301-023301.
[3]	Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack[J]. 中国物理B, 2023, 32(1): 18503-018503.
[4]	D Chevizovich, S Zdravković, A V Chizhov, and Z Ivić. Charge self-trapping in two strand biomolecules: Adiabatic polaron approach[J]. 中国物理B, 2023, 32(1): 10506-010506.
[5]	Ye Zhang(张晔), Qi-Xin Liu(刘琪鑫), Jian-Fang Sun(孙剑芳), Zhen Xu(徐震), and Yu-Zhu Wang(王育竹). Enhanced cold mercury atom production with two-dimensional magneto-optical trap[J]. 中国物理B, 2022, 31(7): 73701-073701.
[6]	Xiaochi Liu(刘小赤), Ning Ru(茹宁), Junyi Duan(段俊毅), Peter Yun(云恩学), Minghao Yao(姚明昊), and Jifeng Qu(屈继峰). High-performance coherent population trapping clock based on laser-cooled atoms[J]. 中国物理B, 2022, 31(4): 43201-043201.
[7]	Miao Wang(王淼), Zheng Chen(陈正), Yao Huang(黄垚), Hua Guan(管桦), and Ke-Lin Gao(高克林). Setup of a dipole trap for all-optical trapping[J]. 中国物理B, 2021, 30(5): 53702-053702.
[8]	Shulan Liu(刘淑兰) and Huijing Yang(杨会静). Molecular dynamics simulations of dopant effectson lattice trapping of cracks in Ni matrix[J]. 中国物理B, 2021, 30(11): 116107-116107.
[9]	宓珉瀚, 张濛, 武盛, 杨凌, 侯斌, 周雨威, 郭立新, 马晓华, 郝跃. High performance InAlN/GaN high electron mobility transistors for low voltage applications[J]. 中国物理B, 2020, 29(5): 57307-057307.
[10]	杨彬彬, 许诺, 周二瑞, 李智炜, 李成, 易品筠, 方粮. A method of generating random bits by using electronic bipolar memristor[J]. 中国物理B, 2020, 29(4): 48505-048505.
[11]	汤振杰, 李荣, 张希威. Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands[J]. 中国物理B, 2020, 29(4): 47701-047701.
[12]	魏斌, 郭恒娇, 纪亚兵, 侯顺永, 印建平. Two types of highly efficient electrostatic traps for single loading or multi-loading of polar molecules[J]. 中国物理B, 2020, 29(4): 43701-043701.
[13]	阙陶陶, 赵亚文, 李柳暗, 何亮, 丘秋凌, 刘振兴, 张津玮, 陈佳, 吴志盛, 刘扬. Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric[J]. 中国物理B, 2020, 29(3): 37201-037201.
[14]	张莉, 邱晓东, 曾令伟, 陈理想. Multiple trapping using a focused hybrid vector beam[J]. 中国物理B, 2019, 28(9): 94202-094202.
[15]	程鹏飞, 张建伟, 王力军. Ramsey-coherent population trapping Cs atomic clock based on lin\|\|lin optical pumping with dispersion detection[J]. 中国物理B, 2019, 28(7): 70601-070601.