Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

doi:10.1088/1674-1056/24/11/117103

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 117103-117103.doi: 10.1088/1674-1056/24/11/117103

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

杨铭^{a b}, 林兆军^a, 赵景涛^a, 王玉堂^a, 李志远^a, 吕元杰^b, 冯志红^b

a School of Physics, Shandong University, Jinan 250100, China;
b National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

收稿日期:2015-02-27 修回日期:2015-06-15 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Lin Zhao-Jun E-mail:linzj@sdu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

Yang Ming (杨铭)^{a b}, Lin Zhao-Jun (林兆军)^a, Zhao Jing-Tao (赵景涛)^a, Wang Yu-Tang (王玉堂)^a, Li Zhi-Yuan (李志远)^a, Lü Yuan-Jie (吕元杰)^b, Feng Zhi-Hong (冯志红)^b

a School of Physics, Shandong University, Jinan 250100, China;
b National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Received:2015-02-27 Revised:2015-06-15 Online:2015-11-05 Published:2015-11-05
Contact: Lin Zhao-Jun E-mail:linzj@sdu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

摘要/Abstract

摘要： A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer.

关键词: AlGaN/GaN heterostructure field effect transistors (HFETs), switching characteristics, substrate bias

Abstract: A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer.

Key words: AlGaN/GaN heterostructure field effect transistors (HFETs), switching characteristics, substrate bias

中图分类号: (III-V semiconductors)

71.55.Eq

85.30.Tv (Field effect devices) 77.80.Fm (Switching phenomena)

杨铭, 林兆军, 赵景涛, 王玉堂, 李志远, 吕元杰, 冯志红. Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors[J]. 中国物理B, 2015, 24(11): 117103-117103.

Yang Ming (杨铭), Lin Zhao-Jun (林兆军), Zhao Jing-Tao (赵景涛), Wang Yu-Tang (王玉堂), Li Zhi-Yuan (李志远), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红). Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors[J]. Chin. Phys. B, 2015, 24(11): 117103-117103.

参考文献 15

[1]	Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, Denbarrs S P, Speck J S and Mishra U K;2005 IEEE Electron Device Lett. 26 781
[2]	Song J, Xu F J, Huang C C, Lin F, Wang X Q, Yang Z J and Shen B;2011 Chin. Phys. B 20 057305
[3]	Zhang P, Zhao S L, Hou B, Wang C, Zheng X F, Ma X H, Zhang J C and Hao Y;2015 Chin. Phys. B 24 037304
[4]	Zhang N Q, Moran B, DenBaars S P, Mishra U K, Wang X W and Ma T P;2001 Phys. Status Solidi A 188 213
[5]	Ma X H, Zhang Y M, Wang X H, Yuan T T, Pang L, Chen W W and Liu X Y;2015 Chin. Phys. B 24 027101
[6]	Li L, Yang L A, Xue J S, Cao R T, Xu S R, Zhang J C and Hao Y;2014 Chin. Phys. B 23 067103
[7]	Lü Y J, Feng Z H, Lin Z J, Gu G D, Dun S B, Yin J Y, Han T T and Cai S J;2014 Chin. Phys. B 23 027101
[8]	Chung J W, Roberts J C, Piner E L and Palacios T;2008 IEEE Electron Device Lett. 29 1196
[9]	Lin Y S, Lain Y W and Hsu S S H;2010 IEEE Electron Device Lett. 31 102
[10]	Deguchi T, Kikuchi T, Arai M, Yamasaki K and Egawa T;2012 IEEE Electron Device Lett. 33 1249
[11]	Seok O, Ahn W, Han M K and Ha M W;2013 Semicond. Sci. Technol. 28 025001
[12]	Yang S, Zhou C, Jiang Q, Lu J, Huang B and Chen K J;2014 Appl. Phys. Lett. 104 013504
[13]	Perez-Tomas A, Fontsere A, Llobet J, Placidi M, Rennesson S, Baron N, Chenot S, Moreno J C and Cordier Y;2013 J. Appl. Phys. 113 174501
[14]	Marso M, Wolter M, Javorka P, Kordos P and Luth H;2003 Appl. Phys. Lett. 82 633
[15]	Zhao J, Lin Z, Corrigan T D, Wang Z, You Z and Wang Z;2007 Appl. Phys. Lett. 91 173507

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

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