中国物理B ›› 2015, Vol. 24 ›› Issue (10): 108101-108101.doi: 10.1088/1674-1056/24/10/108101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

赵丹梅, 赵德刚, 江德生, 刘宗顺, 朱建军, 陈平, 刘炜, 李翔, 侍铭   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2015-03-24 修回日期:2015-05-04 出版日期:2015-10-05 发布日期:2015-10-05
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017).

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Zhao Dan-Mei (赵丹梅), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Chen Ping (陈平), Liu Wei (刘炜), Li Xiang (李翔), Shi Ming (侍铭)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2015-03-24 Revised:2015-05-04 Online:2015-10-05 Published:2015-10-05
  • Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017).

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摘要：

In this paper, the temperature-dependent photoluminescence (PL) properties of GaN grown on Si (111) substrate are studied. The main emission peaks of GaN films grown on Si (111) are investigated and compared with those grown on sapphire substrates. The positions of free and bound exciton luminescence peaks, i.e., FXA and D0X peaks, of GaN films grown on Si (111) substrates undergo red shifts compared with those grown on sapphire. This is attributed to the fact that the GaN films grown on sapphire are under the action of compressive stress, while those grown on Si (111) substrate are subjected to tensile stress. Furthermore, the positions of these peaks may be additionally shifted due to different stress conditions in the real sample growth. The emission peaks due to stacking faults are found in GaN films grown on Si (111) and an S-shaped temperature dependence of PL spectra can be observed, owing to the influence of the quantum well (QW) emission by the localized states near the conduction band gap edge and the temperature-dependent distribution of the photo-generated carriers.

关键词: GaN, photoluminescence, stacking faults

Abstract:

In this paper, the temperature-dependent photoluminescence (PL) properties of GaN grown on Si (111) substrate are studied. The main emission peaks of GaN films grown on Si (111) are investigated and compared with those grown on sapphire substrates. The positions of free and bound exciton luminescence peaks, i.e., FXA and D0X peaks, of GaN films grown on Si (111) substrates undergo red shifts compared with those grown on sapphire. This is attributed to the fact that the GaN films grown on sapphire are under the action of compressive stress, while those grown on Si (111) substrate are subjected to tensile stress. Furthermore, the positions of these peaks may be additionally shifted due to different stress conditions in the real sample growth. The emission peaks due to stacking faults are found in GaN films grown on Si (111) and an S-shaped temperature dependence of PL spectra can be observed, owing to the influence of the quantum well (QW) emission by the localized states near the conduction band gap edge and the temperature-dependent distribution of the photo-generated carriers.

Key words: GaN, photoluminescence, stacking faults

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.07.St (Quantum wells)