›› 2014, Vol. 23 ›› Issue (7): 77504-077504.doi: 10.1088/1674-1056/23/7/077504

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Degradation of ferroelectric and weak ferromagnetic properties of BiFeO3 films due to the diffusion of silicon atoms

肖仁政a, 张早娣a, Vasiliy O. Pelenovichb, 王泽松a, 张瑞a, 李慧a, 刘雍a, 黄志宏a, 付德君a   

  1. a Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China;
    b Department of Physics and Technology, Huazhong Normal University, Wuhan 430070, China
  • 收稿日期:2013-12-02 修回日期:2013-12-31 出版日期:2014-07-15 发布日期:2014-07-15
  • 基金资助:
    Project supported by the International Cooperation Program of the Ministry of Science and Technology of China (Grant No. 2011DFR50580) and the National Natural Science Foundation of China (Grant Nos. 11105100, 11205116, and 11350110206).

Degradation of ferroelectric and weak ferromagnetic properties of BiFeO3 films due to the diffusion of silicon atoms

Xiao Ren-Zheng (肖仁政)a, Zhang Zao-Di (张早娣)a, Vasiliy O. Pelenovichb, Wang Ze-Song (王泽松)a, Zhang Rui (张瑞)a, Li Hui (李慧)a, Liu Yong (刘雍)a, Huang Zhi-Hong (黄志宏)a, Fu De-Jun (付德君)a   

  1. a Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China;
    b Department of Physics and Technology, Huazhong Normal University, Wuhan 430070, China
  • Received:2013-12-02 Revised:2013-12-31 Online:2014-07-15 Published:2014-07-15
  • Contact: Huang Zhi-Hong, Fu De-Jun E-mail:hzh19790109@126.com;djfu@whu.edu.cn
  • About author:75.50.Gg; 77.80.-e; 68.35.Fx; 82.80.Yc
  • Supported by:
    Project supported by the International Cooperation Program of the Ministry of Science and Technology of China (Grant No. 2011DFR50580) and the National Natural Science Foundation of China (Grant Nos. 11105100, 11205116, and 11350110206).

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摘要： Crystalline BiFeO3 (BFO) films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM). The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry (RBS). The element analysis is performed by energy dispersive X-ray spectroscopy (EDS). Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy (XPS) indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10-4 up to 7.1 × 10-4 A/cm-2.

关键词: ferroelectric, ferromagnetic, diffusion, silicon

Abstract: Crystalline BiFeO3 (BFO) films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM). The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry (RBS). The element analysis is performed by energy dispersive X-ray spectroscopy (EDS). Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy (XPS) indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10-4 up to 7.1 × 10-4 A/cm-2.

Key words: ferroelectric, ferromagnetic, diffusion, silicon

中图分类号:  (Ferrimagnetics)

  • 75.50.Gg
77.80.-e (Ferroelectricity and antiferroelectricity) 68.35.Fx (Diffusion; interface formation) 82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis)