中国物理B ›› 2014, Vol. 23 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/23/5/058501
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
乔士柱a, 康仕寿a, 秦羽丰b, 李强a, 钟海a, 康韵a, 于淑云a, 韩广兵a, 颜世申a, 梅良模a
Qiao Shi-Zhu (乔士柱)a, Kang Shi-Shou (康仕寿)a, Qin Yu-Feng (秦羽丰)b, Li Qiang (李强)a, Zhong Hai (钟海)a, Kang Yun (康韵)a, Yu Shu-Yun (于淑云)a, Han Guang-Bing (韩广兵)a, Yan Shi-Shen (颜世申)a, Mei Liang-Mo (梅良模)a
摘要: Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al2O3 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.
中图分类号: (Semiconductor-device characterization, design, and modeling)