Interface-related switching behaviors of amorphous Pr0.67Sr0.33MnO3-based memory cells

doi:10.1088/1674-1056/21/10/107304

中国物理B ›› 2012, Vol. 21 ›› Issue (10): 107304-107304.doi: 10.1088/1674-1056/21/10/107304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

张婷, 白莹, 贾彩虹, 张伟风

Key Laboratory of Photovoltaic Techniques of Henan Province，School of Physics and Electronics, Henan University, Kaifeng 475004, China

收稿日期:2012-02-17 修回日期:2012-03-09 出版日期:2012-09-01 发布日期:2012-09-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60976016), the Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTUHN), China (Grant No. 2012IRTSTHN004), and the Foundation Co-established by the Province and the Ministry in Henan University, China (Grant No. SBGJ090503).

Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

Zhang Ting (张婷), Bai Ying (白莹), Jia Cai-Hong (贾彩虹), Zhang Wei-Feng (张伟风)

Key Laboratory of Photovoltaic Techniques of Henan Province，School of Physics and Electronics, Henan University, Kaifeng 475004, China

Received:2012-02-17 Revised:2012-03-09 Online:2012-09-01 Published:2012-09-01
Contact: Zhang Wei-Feng E-mail:wfzhang@henu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60976016), the Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTUHN), China (Grant No. 2012IRTSTHN004), and the Foundation Co-established by the Province and the Ministry in Henan University, China (Grant No. SBGJ090503).

摘要/Abstract

摘要： The resistive switching properties in amorphous Pr_0.67Sr_0.33MnO₃ films deposited by pulsed laser deposition are investigated. Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr_0.67Sr_0.33MnO₃/F:SnO₂ junctions are obtained at room temperature. Dramatically, the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range. The results allocated those two switching types to areas of different defect densities beneath the same electrode. The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role. An interface-effect-related resistance switching is proposed in an amorphous Pr_0.67Sr_0.33MnO₃-based memory cell.

关键词: Pr_0.67Sr_0.33MnO₃ thin films, resistance switching, amorphous, metal-oxide interface

Abstract: The resistive switching properties in amorphous Pr_0.67Sr_0.33MnO₃ films deposited by pulsed laser deposition are investigated. Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr_0.67Sr_0.33MnO₃/F:SnO₂ junctions are obtained at room temperature. Dramatically, the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range. The results allocated those two switching types to areas of different defect densities beneath the same electrode. The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role. An interface-effect-related resistance switching is proposed in an amorphous Pr_0.67Sr_0.33MnO₃-based memory cell.

Key words: Pr_0.67Sr_0.33MnO₃ thin films, resistance switching, amorphous, metal-oxide interface

中图分类号: (Electronic transport in interface structures)

73.40.-c

73.40.Rw (Metal-insulator-metal structures) 73.50.Fq (High-field and nonlinear effects) 72.20.-i (Conductivity phenomena in semiconductors and insulators)

张婷, 白莹, 贾彩虹, 张伟风. Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells[J]. 中国物理B, 2012, 21(10): 107304-107304.

Zhang Ting (张婷), Bai Ying (白莹), Jia Cai-Hong (贾彩虹), Zhang Wei-Feng (张伟风). Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells[J]. Chin. Phys. B, 2012, 21(10): 107304-107304.

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Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

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