Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

doi:10.1088/1674-1056/23/11/117803

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 117803-117803.doi: 10.1088/1674-1056/23/11/117803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

王维颖^a, 刘贵鹏^a, 金鹏^a, 毛德丰^a, 李维^a, 王占国^a, 田武^b, 陈长清^b

a Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2014-03-13 修回日期:2014-05-05 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2012CB619306) and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

Wang Wei-Ying (王维颖)^a, Liu Gui-Peng (刘贵鹏)^a, Jin Peng (金鹏)^a, Mao De-Feng (毛德丰)^a, Li Wei (李维)^a, Wang Zhan-Guo (王占国)^a, Tian Wu (田武)^b, Chen Chang-Qing (陈长清)^b

a Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2014-03-13 Revised:2014-05-05 Online:2014-11-15 Published:2014-11-15
Contact: Liu Gui-Peng E-mail:liugp@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2012CB619306) and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

摘要/Abstract

摘要：

Low temperature photoluminescence (PL) measurements have been performed for a set of GaN/Al_xGa_1-xN quantum wells (QWs). The experimental results show that the optical full width at half maximum (FWHM) increases relatively rapidly with increasing Al composition in the Al_xGa_1-xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM's broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.

关键词: GaN/AlGaN quantum wells, interface roughness, optical full width at half maximum

Abstract:

Key words: GaN/AlGaN quantum wells, interface roughness, optical full width at half maximum

中图分类号: (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

78.67.-n

78.66.Fd (III-V semiconductors) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

王维颖, 刘贵鹏, 金鹏, 毛德丰, 李维, 王占国, 田武, 陈长清. Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells[J]. 中国物理B, 2014, 23(11): 117803-117803.

Wang Wei-Ying (王维颖), Liu Gui-Peng (刘贵鹏), Jin Peng (金鹏), Mao De-Feng (毛德丰), Li Wei (李维), Wang Zhan-Guo (王占国), Tian Wu (田武), Chen Chang-Qing (陈长清). Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells[J]. Chin. Phys. B, 2014, 23(11): 117803-117803.

参考文献 26

[1]	Taniyasua Y and Kasu M 2010 Appl. Phys. Lett. 96 221110
[2]	Pernot C, Kim M, Fukahori S, Inazu T, Fujita T, Nagasawa Y, Hirano A, Ippommatsu M, Iwaya M, Kamiyama S, Akasaki I and Amano H 2010 Appl. Phys. Express 3 061004
[3]	Nakamura S, Senoh M, S Nagahama, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umenoto H, Sano Mand Chocho K 1998 Appl. Phys. Lett. 72 1939.
[4]	Li D B, Sun X J, Song H, Li Z M, Chen Y R, Jiang H and Miao G Q 2012 Adv. Mater. 24 845
[5]	Li D B, Sun X J, Song H, Li Z M, Chen Y R, Miao G Q and Jiang H 2011 Appl. Phys. Lett. 98 011108
[6]	Arulkumaran S, Sakai M, Egawa T, Ishikawa H, Jimbo T, Shibata T, Asai K, Sumiya S, Kuraoka Y, Tanaka M and Oda O 2002 Appl. Phys. Lett. 81 1131
[7]	Bernardini F, Fiorentini V and Vanderbilt D 1997 Phys. Rev. B 56 R10024
[8]	Kneissl M, Yang Z H, Teepe M, Knollenberg C, Schmidt O, Kiesel P, Johnson N M, Schujman S and Schowalter L J 2007 J. Appl. Phys. 101 123103
[9]	Lee S N, Son J K, Paek H S, Sung Y J, Kim K S, Kim H K, Kim H, Sakong T, Park Y, Ha K H and Nam O H 2008 Appl. Phys. Lett. 93 091109
[10]	Gurusinghe M N, Davidsson S K and Andersson T G 2005 Phys. Rev. B 72 045316
[11]	Singh J, Bajaj K K and Chaudhuri S 1984 Appl. Phys. Lett. 44 805
[12]	Singh J and Bajaj K K 1985 J. Appl. Phys. 57 5433
[13]	Singh J and Bajaj K K 1986 Appl. Phys. Lett. 48 1077
[14]	Bodin C, Andre R, Cibert J, Dang L S, Bellet D, Feuillet G and Jouneau P H 1995 Phys. Rev. B 51 13181
[15]	Tahtamouni T M, Nepal N, Lin J Y, Jiang H X and Chow W W 2006 Appl. Phys. Lett. 89 131922
[16]	Nepal N, Li J, Nakarmi M L, Lin J Y and Jiang H X 2006 Appl. Phys. Lett. 88 062103
[17]	Srinivas V, Hryniewicz J, Chen Y J and Wood C C 1992 Phys. Rev. B 46 10193
[18]	Damen T C, Shah J, Oberli D Y, Chemla D S, Cunningham J E and Kuo J M 1990 Phys. Rev. B 42 7434
[19]	Ando T, Flower A B and Stern F 1982 Rev. Mod. Phys. 54 437
[20]	Bernardini F and Fiorentini V 1998 Phys. Rev. B 57 R9427
[21]	Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A and Stutzmann M 2000 J. Appl. Phys. 87 334
[22]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[23]	Suzuki M, Uenoyama T and Yanase A 1995 Phys. Rev. B 52 8132
[24]	Christen J and Bimberg D 1990 Phys. Rev. B 42 7213
[25]	Shan W, Xie X C, Song J J and Goldenberg B 1995 Appl. Phys. Lett. 67 2512
[26]	Chen G D, Smith M, Lin J Y, Jiang H X, Khan M A and Sun C J 1995 Appl. Phys. Lett. 67 1653

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 26

相关文章 4

Metrics

本文评价

推荐阅读 0

[1]	谷承艳, 刘贵鹏, 时凯, 宋亚峰, 李成明, 刘祥林, 杨少延, 朱勤生, 王占国. Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well[J]. 中国物理B, 2012, 21(10): 107305-107305.
[2]	张金风, 毛维, 张进城, 郝跃. The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures[J]. 中国物理B, 2008, 17(7): 2689-2695.
[3]	张雪锋, 徐静平, 黎沛涛, 李春霞, 官建国. Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO₂ gate stack[J]. 中国物理B, 2007, 16(12): 3820-3826.
[4]	贺德衍, K. A. McGreer. Reduction of insertion loss after annealing of silicon oxynitride optical waveguides[J]. 中国物理B, 2002, 11(1): 83-86.