中国物理B ›› 2013, Vol. 22 ›› Issue (6): 66801-066801.doi: 10.1088/1674-1056/22/6/066801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

One-dimensional diffusion of vacancies on Sr/Si(100)-c(2×4) surface

杨景景a, 杜文汉b   

  1. a Changzhou Institute of Technology, Changzhou 213002, China;
    b Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2012-08-18 修回日期:2012-11-07 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60771066).

One-dimensional diffusion of vacancies on Sr/Si(100)-c(2×4) surface

Yang Jing-Jing (杨景景)a, Du Wen-Han (杜文汉)b   

  1. a Changzhou Institute of Technology, Changzhou 213002, China;
    b Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
  • Received:2012-08-18 Revised:2012-11-07 Online:2013-05-01 Published:2013-05-01
  • Contact: Du Wen-Han E-mail:whdu@mail.ustc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60771066).

PDF (PC)

357

赞

摘要： An Sr/Si(100)-c(2×4) surface is investigated by high-resolution scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The semiconductor property of this surface is confirmed by STS. The STM images of this surface shows that it is bias-voltage dependent and an atomic resolution image can be obtained at an empty state under a bias voltage of 1.5 V. Furthermore, one-dimensional (1D) diffusion of vacancies can be found in the room-temperature STM images. Sr vacancies diffuse along the valley channels, which are constructed by silicon dimers in the surface. Weak interaction between Sr and silicon dimers, low metal coverage, surface vacancy, and energy of thermal fluctuation at room temperature all contribute to this 1D diffusion.

关键词: Sr/Si(100)-c(2×4), STM, diffusion of vacancies

Abstract: An Sr/Si(100)-c(2×4) surface is investigated by high-resolution scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The semiconductor property of this surface is confirmed by STS. The STM images of this surface shows that it is bias-voltage dependent and an atomic resolution image can be obtained at an empty state under a bias voltage of 1.5 V. Furthermore, one-dimensional (1D) diffusion of vacancies can be found in the room-temperature STM images. Sr vacancies diffuse along the valley channels, which are constructed by silicon dimers in the surface. Weak interaction between Sr and silicon dimers, low metal coverage, surface vacancy, and energy of thermal fluctuation at room temperature all contribute to this 1D diffusion.

Key words: Sr/Si(100)-c(2×4), STM, diffusion of vacancies

中图分类号:  (Scanning tunneling microscopy (including chemistry induced with STM))

  • 68.37.Ef
73.20.At (Surface states, band structure, electron density of states) 81.16.-c (Methods of micro- and nanofabrication and processing)