Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

doi:10.1088/1674-1056/21/8/088104

中国物理B ›› 2012, Vol. 21 ›› Issue (8): 88104-088104.doi: 10.1088/1674-1056/21/8/088104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors

轩瑞杰, 刘慧宣

Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha 410082, China

收稿日期:2012-01-16 修回日期:2012-04-25 出版日期:2012-07-01 发布日期:2012-07-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10874042).

Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors

Xuan Rui-Jie (轩瑞杰), Liu Hui-Xuan (刘慧宣 )

Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha 410082, China

Received:2012-01-16 Revised:2012-04-25 Online:2012-07-01 Published:2012-07-01
Contact: Xuan Rui-Jie E-mail:xuanruijie1988@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10874042).

摘要/Abstract

摘要： A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO₂ nanowire electric-double-layer (EDL) field-effect transistor (FET) is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of untralarge specific gate capacitance (～ 2.14 μF/cm²) directly bound up with mobile ions-induced EDL (sandwiched between top electrode and bottom electrode) effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm²/V·s, current on/off ration of 2× 10⁴, and subthreshold gate voltage swing (S=d V_gs/d(log I_ds)) of 140 mV/decade. The threshold voltage V_th (0.1 V) is estimated which indicates that SnO₂ namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by microporous SiO₂-based solid electrolyte is very promising for battery-powered portable nanoscale sensor.

关键词: electric double layer, proton conductor, solid electrolytes, nanowire transistors

Abstract: A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO₂ nanowire electric-double-layer (EDL) field-effect transistor (FET) is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of untralarge specific gate capacitance (～ 2.14 μF/cm²) directly bound up with mobile ions-induced EDL (sandwiched between top electrode and bottom electrode) effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm²/V·s, current on/off ration of 2× 10⁴, and subthreshold gate voltage swing (S=d V_gs/d(log I_ds)) of 140 mV/decade. The threshold voltage V_th (0.1 V) is estimated which indicates that SnO₂ namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by microporous SiO₂-based solid electrolyte is very promising for battery-powered portable nanoscale sensor.

Key words: electric double layer, proton conductor, solid electrolytes, nanowire transistors

中图分类号: (Nanowires)

81.07.Gf

72.80.Ey (III-V and II-VI semiconductors) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

轩瑞杰, 刘慧宣 . Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors[J]. 中国物理B, 2012, 21(8): 88104-088104.

Xuan Rui-Jie (轩瑞杰), Liu Hui-Xuan (刘慧宣 ). Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors[J]. Chin. Phys. B, 2012, 21(8): 88104-088104.

参考文献 22

[1]	Law M, Greene L E, Johnson J C, Saykally R and Yang P D 2005 Nat. Mater. 4 455
[2]	EricN D, Wan Q, Guo W, Chen Y B, Pan X Q and Lu W 2007 Nano Lett. 7 2463
[3]	Zhong Z H, Wang D L, Cui Y, Bockrath M W and Lieber C M 2003 Science 302 1377
[4]	Kolmakov A, Zhang Y X, Cheng G S and Moskovits M 2003 Adv. Mater. 5 997
[5]	Samson S and Fonstad C G 1973 J. Appl. Phys. 44 4618
[6]	Wang Z L 2003 Adv. Mater. 15 432
[7]	Comini E, Faglia G, Sberveglieri G, Pan Z W and Wang Z L 2002 Appl. Phys. Lett. 81 1869
[8]	Li Q H, Chen Y L, Wan Q and Wang T H 2004 Appl. Phys. Lett. 85 1805
[9]	Li M, Zhang H Y, Guo C X, Xu J B and Fu X J 2009 Chin. Phys. B 18 1594
[10]	Li M, Zhang H Y, Guo C X, Xu J B, Fu X J and Chen P F 2009 Chin. Phys. B 18 5020
[11]	Dattoli E N, Kim K H, Fung W Y, Choi S Y and Lu W 2009 IEEE Electron Dev. Lett. 30 730
[12]	Kelley T W, Baude P F, Gerlach C, Ender D E, Muyres D, Haase M A, Vogel D E and Theiss S D 2004 Chem. Mater. 16 4413
[13]	Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Gonçalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Adv. Mater. 17 590
[14]	Kim C S, Jo S J, Lee S W, Kim W J, Baik H K, Lee S J, Hwang D K and Im S 2006 Appl. Phys. Lett. 88 243515
[15]	Lu A X, Sun J, Jiang J and Wan Q 2010 Appl. Phys. Lett. 96 043114
[16]	Sun J, Jiang J, Lu A X and Wan Q 2010 J. Phys. D: Appl. Phys. 43 295103
[17]	Sun J, Tang Q X, Lu A X, Jiang X J and Wan Q 2009 Nano Technol. 20 255202
[18]	Yan F, Migliorato P, Hong Y, Rana V, Ishihara R, Hiroshima Y, Abe D, Inoue S and Shimoda T 2005 Appl. Phys. Lett. 86 253504
[19]	Godet J and Pasquarello A 2006 Phys. Rev. Lett. 97 155901
[20]	Lee J, Kaake L G, Cho J H, Zhu X Y, Lodge T P and Frisbie C D 2009 J. Phys. Chem. C 113 8972
[21]	Debye P 1936 Chem. Rev. 19 171
[22]	Hoffman R L 2004 J. Appl. Phys. 95 5813

Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors

Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 22

相关文章 8

Metrics

本文评价

推荐阅读 0

[1]	Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华). Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor[J]. 中国物理B, 2022, 31(1): 17701-017701.
[2]	郭仰岩, 韩伟华, 赵晓松, 窦亚梅, 张晓迪, 吴歆宇, 杨富华. Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors[J]. 中国物理B, 2019, 28(10): 107303-107303.
[3]	段一飞, 马宏伟, 高泽阳, 王凯歌, 赵伟, 孙聃, 王归仁, 李俊杰, 白晋涛, 顾长志. Reversal current observed in micro-and submicro-channel flow under non-continuous DC electric field[J]. 中国物理B, 2017, 26(6): 68203-068203.
[4]	黄一珂, 刘晓红, 李姝, 言天英. Development of mean-field electrical double layer theory[J]. 中国物理B, 2016, 25(1): 16801-016801.
[5]	姚霞银, 黄冰心, 尹景云, 彭刚, 黄祯, 高超, 刘登, 许晓雄. All-solid-state lithium batteries with inorganic solid electrolytes: Review of fundamental science[J]. 中国物理B, 2016, 25(1): 18802-018802.
[6]	马刘红, 韩伟华, 王昊, 杨香, 杨富华. Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors[J]. 中国物理B, 2015, 24(12): 128101-128101.
[7]	王昊, 韩伟华, 马刘红, 李小明, 杨富华. Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures[J]. , 2014, 23(8): 88107-088107.
[8]	赵华波, 应轶群, 严峰, 魏芹芹, 傅云义, 张岩, 李彦, 魏子钧, 张朝晖. Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution[J]. 中国物理B, 2011, 20(10): 108103-108103.