中国物理B ›› 2012, Vol. 21 ›› Issue (8): 84207-084207.doi: 10.1088/1674-1056/21/8/084207

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Intersubband absorption with difference-frequency generation in GaAs asymmetric quantum wells

曹小龙a c, 李忠洋b, 姚建铨a c, 王与烨a c, 朱能念a c, 钟凯a b, 徐德刚a b   

  1. a College of Precision Instrument and Opto-electronics Engineering, Institute of Laser and Opto-electronics, Tianjin University, Tianjin 300072, China;
    b Institute of Electric Power, North China University of Water Resources and Electric Power, Zhengzhou 450011, China;
    c Key Laboratory of Opto-electronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China
  • 收稿日期:2011-08-12 修回日期:2012-01-15 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60801017, 61172010, 61101058, and 61107086) and the Fund from the Science and Technology Committee of Tianjin, China (Grant No. 11JCYBJC01100).

Intersubband absorption with difference-frequency generation in GaAs asymmetric quantum wells

Cao Xiao-Long (曹小龙)a c, Li Zhong-Yang (李忠洋)b, Yao Jian-Quan (姚建铨)a c, Wang Yu-Ye (王与烨)a c, Zhu Neng-Nian (朱能念)a c, Zhong Kai (钟凯)a b, Xu De-Gang (徐德刚 )a b   

  1. a College of Precision Instrument and Opto-electronics Engineering, Institute of Laser and Opto-electronics, Tianjin University, Tianjin 300072, China;
    b Institute of Electric Power, North China University of Water Resources and Electric Power, Zhengzhou 450011, China;
    c Key Laboratory of Opto-electronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China
  • Received:2011-08-12 Revised:2012-01-15 Online:2012-07-01 Published:2012-07-01
  • Contact: Cao Xiao-Long E-mail:caoxiaolong63@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60801017, 61172010, 61101058, and 61107086) and the Fund from the Science and Technology Committee of Tianjin, China (Grant No. 11JCYBJC01100).

摘要: An asymmetric quantum well (AQW) is designed to emit terahertz (THz) waves by using difference frequency generation (DFG) with the structure of GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As. The characteristics of absorption coefficients are analysed under the parabolic and non-parabolic energy-band conditions in detail. We find that the absorption coefficients vary with the two pump optical intensities, and they reach the maxima when the pump wavelengths are given as λ p1=9.70 μm and λ p2=10.64 μm respectively. Compared with non-parabolic condition, the total absorption coefficient under parabolic condition shows a blue shift, which is due to the increase in the energy difference between the ground and excited states. By adjusting the two pump optical intensities, the wave vector phase-matching condition inside the AQW is satisfied.

关键词: asymmetric quantum wells, absorption coefficient, THz-wave, phase-matching

Abstract: An asymmetric quantum well (AQW) is designed to emit terahertz (THz) waves by using difference frequency generation (DFG) with the structure of GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As. The characteristics of absorption coefficients are analysed under the parabolic and non-parabolic energy-band conditions in detail. We find that the absorption coefficients vary with the two pump optical intensities, and they reach the maxima when the pump wavelengths are given as λ p1=9.70 μm and λ p2=10.64 μm respectively. Compared with non-parabolic condition, the total absorption coefficient under parabolic condition shows a blue shift, which is due to the increase in the energy difference between the ground and excited states. By adjusting the two pump optical intensities, the wave vector phase-matching condition inside the AQW is satisfied.

Key words: asymmetric quantum wells, absorption coefficient, THz-wave, phase-matching

中图分类号:  (Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems)

  • 42.50.Nn
78.67.De (Quantum wells) 42.65.-k (Nonlinear optics) 61.72.uj (III-V and II-VI semiconductors)