Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

doi:10.1088/1674-1056/21/8/084208

中国物理B ›› 2012, Vol. 21 ›› Issue (8): 84208-084208.doi: 10.1088/1674-1056/21/8/084208

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

王永宾, 徐云, 宋国峰, 陈良惠

Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2011-12-20 修回日期:2012-02-17 出版日期:2012-07-01 发布日期:2012-07-01
基金资助:
Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4112058).

Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

Wang Yong-Bin (王永宾), Xu Yun (徐云), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠 )

Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2011-12-20 Revised:2012-02-17 Online:2012-07-01 Published:2012-07-01
Contact: Xu Yun E-mail:xuyun@red.semi.ac.cn
Supported by:
Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4112058).

摘要/Abstract

摘要： Asymmetric laser heterostructure is developed to improve beam properties of GaSb-based diode lasers with no degradation in laser parameters. Employing the semivectorial finite difference method, the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically. After carefully designing, a particular asymmetric laser structure is proposed. Its beam divergence in the fast axis is reduced from 61° to 34°compared with that of the broad-waveguide structure. The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure.

关键词: broad-waveguide structure, asymmetric heterostructure, beam divergence, optical confinement factor

Abstract: Asymmetric laser heterostructure is developed to improve beam properties of GaSb-based diode lasers with no degradation in laser parameters. Employing the semivectorial finite difference method, the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically. After carefully designing, a particular asymmetric laser structure is proposed. Its beam divergence in the fast axis is reduced from 61° to 34°compared with that of the broad-waveguide structure. The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure.

Key words: broad-waveguide structure, asymmetric heterostructure, beam divergence, optical confinement factor

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation)

王永宾, 徐云, 宋国峰, 陈良惠 . Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters[J]. 中国物理B, 2012, 21(8): 84208-084208.

Wang Yong-Bin (王永宾), Xu Yun (徐云), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠 ). Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters[J]. Chin. Phys. B, 2012, 21(8): 84208-084208.

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Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

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